UNISONIC TECHNOLOGIES CO., LTD
UT4406
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UT4406
can provide excellent R
DS(ON)
, low gate charge
and operation with gate voltages as low as 2.5V by using UTC’s
advanced trench technology which makes an excellent high side
switch for notebook CPU core DC-DC conversion.
Power MOSFET
SOP-8
FEATURES
* R
DS(ON)
< 14mΩ @V
GS
= 10 V
*
R
DS(ON)
< 16.5mΩ @V
GS
= 4.5 V
*
R
DS(ON)
< 26mΩ @V
GS
= 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
Lead-free:
UT4406L
Halogen-free: UT4406G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal
UT4406-S08-R
UT4406-S08-T
Ordering Number
Lead Free
UT4406L-S08-R
UT4406L-S08-T
Halogen Free
UT4406G-S08-R
UT4406G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
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QW-R502-233.B
Copyright © 2008 Unisonic Technologies Co., Ltd
UT4406
PIN CONFIGURATION
Power MOSFET
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UT4406
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±12
Continuous Drain Current
I
D
11.5
A
Pulsed Drain Current
I
DM
80
A
Avalanche Current (Note 2)
I
AV
25
A
Repetitive Avalanche Energy, L=0.1mH (Note 2)
E
AV
78
mJ
Power Dissipation
T
C
=25°C
P
D
3
W
°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
48
12
MAX
65
16
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
, I
D
=250µA
V
DS
=5V, V
GS
=4.5V
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
GS
=2.5V, I
D
=8A
MIN
30
1
100
0.8
60
1
11.5
13.5
19.5
1630
201
142
4
5
32
5
18
2.5
5.5
0.83
1
4.5
18.7
19.8
1.5
14.8
17.5
26.8
TYP
MAX
UNIT
V
µA
nA
V
A
mΩ
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=15V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
GS
=10V, V
DS
=15V, R
L
=1.2Ω,
Turn-ON Rise Time
t
R
R
G
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=15V, V
GS
=4.5V, I
D
=11.5A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=10A, V
GS
=0V
Maximum Body-Diode Continuous
I
S
Current
Body Diode Reverse Recovery Time
t
RR
I
F
=10A, dI/dt=100A/μs
Body Diode Reverse Recovery
Q
RR
I
F
=10A, dI/dt=100A/μs
Charge
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
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UT4406
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1200
1000
800
600
400
200
0
0
200
400
600
800
Source to Drain Voltage,V
SD
(mV)
10%
t
D(ON)
t
THL
Power MOSFET
Switching Time Waveforms
V
DS
90%
V
GS
t
D(OFF)
t
TLH
Drain-Source On-State
Resistance Characteristics
12
10V
10
8
6
4
2
0
4.5V
V
GS
=2.5V
0
50
100
150
200
Drain to Source Voltage, V
DS
(V)
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QW-R502-233.B
UT4406
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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