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UT4406L-S08-T

Description
N-CHANNEL ENHANCEMENT MODE
CategoryDiscrete semiconductor    The transistor   
File Size201KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT4406L-S08-T Overview

N-CHANNEL ENHANCEMENT MODE

UT4406L-S08-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeSOT
package instructionLEAD FREE, SOP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)11.5 A
Maximum drain-source on-resistance0.0148 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT4406
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UT4406
can provide excellent R
DS(ON)
, low gate charge
and operation with gate voltages as low as 2.5V by using UTC’s
advanced trench technology which makes an excellent high side
switch for notebook CPU core DC-DC conversion.
Power MOSFET
SOP-8
FEATURES
* R
DS(ON)
< 14mΩ @V
GS
= 10 V
*
R
DS(ON)
< 16.5mΩ @V
GS
= 4.5 V
*
R
DS(ON)
< 26mΩ @V
GS
= 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
Lead-free:
UT4406L
Halogen-free: UT4406G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal
UT4406-S08-R
UT4406-S08-T
Ordering Number
Lead Free
UT4406L-S08-R
UT4406L-S08-T
Halogen Free
UT4406G-S08-R
UT4406G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
1 of 5
QW-R502-233.B
Copyright © 2008 Unisonic Technologies Co., Ltd

UT4406L-S08-T Related Products

UT4406L-S08-T UT4406 UT4406-S08-R UT4406-S08-T UT4406G-S08-T UT4406L-S08-R
Description N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code SOT - SOT SOT SOT SOT
package instruction LEAD FREE, SOP-8 - SMALL OUTLINE, R-PDSO-G8 SOP-8 HALOGEN FREE, SOP-8 SOP-8
Contacts 8 - 8 8 8 8
Reach Compliance Code compli - compli compliant compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V 30 V 30 V 30 V
Maximum drain current (ID) 11.5 A - 11.5 A 11.5 A 11.5 A 11.5 A
Maximum drain-source on-resistance 0.0148 Ω - 0.0148 Ω 0.0148 Ω 0.0148 Ω 0.0148 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 1 - 1 1 1 1
Number of terminals 8 - 8 8 8 8
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES - YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
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