UNISONIC TECHNOLOGIES CO., LTD
UT6302
P-CHANNEL
ENHANCEMENT MOSFET
DESCRIPTION
The UTC
UT6302
is a power MOSFET offering the customers
efficient and reliable performance.
The UTC
UT6302
is ideal for thin application environments, such
as portable electronics and PCMCIA cards.
Power MOSFET
FEATURES
* Extremely-Low On-Resistance
* Fast Switching Speed
SYMBOL
Drain (3)
Gate (2)
Source (1)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT6302L-AE2-R
UT6302G-AE2-R
UT6302L-AE3-R
UT6302G-AE3-R
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
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QW-R502-363.E
UT6302
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current (V
GS
=-4.5V, Ta=25°C)
I
D
-0.78
A
Pulsed Drain Current (Note 2)
I
DM
-4.9
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/nS
Power Dissipation (T
A
=25°C)
540
mW
P
D
Linear Derating Factor above 25°C
4.3
mW /°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. I
SD
≤-0.61A,
di/dt≤76A/µs, V
DD
≤V
(BR)DSS
, T
J
=150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR-4 Board, t
≤
5sec.
SYMBOL
θ
JA
RATINGS
230
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
BV
DSS
I
DSS
I
GSS
△BV
DSS
/△T
J
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
TEST CONDITIONS
V
GS
=0 V, I
D
=-250 µA
V
DS
=-16V,V
GS
=0V
V
GS
=±12 V, V
DS
=0 V
I
D
=-1mA, Reference to 25°C
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-0.61A (Note 2)
V
GS
=-2.7V, I
D
=-0.31A (Note 2)
MIN
-20
TYP
MAX
UNIT
-4.9
-0.70
V
-1.0
µA
±100
nA
mV/°C
-1.5
0.60
0.90
V
Ω
Ω
pF
pF
pF
3.6
0.84
1.5
nC
nC
nC
nS
nS
nS
nS
V
DS
=-15V, V
GS
=0V, f=1.0MHz
97
53
28
2.4
0.56
1.0
13
18
22
22
V
GS
=-4.5V, V
DS
=-16V
I
D
=-0.61A (Note 1, 2)
V
DD
=-10V, I
D
=-0.61A,
R
G
=6.2Ω, R
D
=16Ω (Note 1, 2)
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QW-R502-363.E
UT6302
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=-0.61A, V
GS
=0V
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current (Note 1)
Reverse Recovery Time
t
rr
T
J
=25°C ,I
F
=-0.61A,
di/dt=100A/µs (Note 2)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating; Pulse width limited by T
J(MAX)
2. Pulse Width
≤300μs,
Duty Cycle
≤2%.
MIN
Power MOSFET
TYP
MAX
-1.2
-0.54
-4.9
35
26
53
39
UNIT
V
A
A
nS
nC
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QW-R502-363.E
UT6302
TEST CIRCUITS AND WAVEFORMS
+
(3)
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
Power MOSFET
D.U.T.
-
+
(2)
-
(Note 2)
(1)
R
G
V
GS
(Note 1)
dv/dt controlled by R
G
I
SD
controlled by Duty Factor
“D”
D.U.T.
–
Device Under Test
+
-
V
DD
(Note 1)
-
(4)
+
Peak Diode Recovery dv/dt Test Circuit
(1) Driver Gate Drive
P.W.
Period
P.W.
Period
V
GS
=10V
(Note 3)
D=
(2) D.U.T. I
SD
Waveform
Reverse
Recovery
Body Diode Forward Current
Current
di/dt
(3) D.U.T. V
DS
Waveform
Body Recovery
dv/dt
Re-Applied
Voltage
(4) Inductor Current
V
DD
Body Diode Forward Drop
Ripple≤5
I
SD
Peak Diode Recovery dv/dt Waveforms
Notes:
1.
2.
3.
Reverse Polarity for P-Channel
Use P-Channel Driver for P-Channel Measurements
V
GS
=5.0V for Logic Level and 3V Drive Devices
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QW-R502-363.E
UT6302
TEST CIRCUITS AND WAVEFORMS(Cont.)
Current Regulator
Same Type as D.U.T.
12V
50kΩ
0.2µF
0.3µF
D.U.T.
V
GS
-3mA
I
G
I
D
Current Sampling Resistors
Charge
-
V
+
DS
V
G
-4.5V
Q
GS
Power MOSFET
Q
G
Q
GD
Gate Charge Test Circuit
Gate Charge Waveforms
V
DS
90%
10%
V
GS
t
d(ON)
t
R
t
d(OFF)
t
F
Switching Time Test Circuit
Switching Time Waveforms
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QW-R502-363.E
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