UNISONIC TECHNOLOGIES CO., LTD
UTD484
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
Power MOSFET
The
UTD484
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* R
DS(ON)
< 15mΩ @ V
GS
=10 V, I
D
=20 A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
1
G
G
S
2
D
D
S
Pin Assignment
3
4
5
6
S
-
-
-
S
-
-
-
S G D D
7
-
-
D
8
-
-
D
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UTD484L-TN3-T
UTD484G-TN3-T
TO-252
UTD484L-TN3-R
UTD484G-TN3-R
TO-252
-
UTD484G-K08-3030-R DFN-8(3×3)
Note:
Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-207.E
UTD484
MARKING
TO-252
DFN-8(3×3)
Power MOSFET
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UTD484
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
T
C
=25°C
I
D
25
A
Pulsed Drain Current(Note 1)
I
DM
80
A
Avalanche Current(Note 1)
I
AR
15
A
Repetitive avalanche energy L=0.3mH(Note 1)
E
AR
33
mJ
TO-252
T
C
=25°C
41
DFN-8(3×3)
P
D
Power Dissipation
W
TO-252
2.1
T
A
=25°C DFN-8(3×3)
1.9
(Notes 3)
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. Exposed pad is ground and must be soldered to PCB
THERMAL DATA
SYMBOL
θ
JA
θ
JC
MIN
TYP
55
2.3
MAX
60
65
3
UNIT
°C/W
°C/W
°C/W
PARAMETER
TO-252
Junction-to-Ambient
DFN-8(3×3)
Junction-to-Case
TO-252/DFN-8(3×3)
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QW-R502-207.E
UTD484
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
V
DS
=24V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±20V
V
DS
=V
GS
, I
D
=250 µA
V
DS
=5 V, V
GS
=10V
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=15 A
MIN
30
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
Power MOSFET
TYP
MAX
UNIT
V
µA
nA
V
A
mΩ
1
±100
1
80
1.5
12.1
18.5
938
142
99
17.5
3
4.1
5
12
19
6
0.71
2.5
15
23
1220
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=15 V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=15V, V
GS
=10V, I
D
=20 A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V,V
DS
=15V,R
L
=0.75Ω,
R
GEN
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous
I
S
Current
Body Diode Reverse Recovery Time
t
RR
I
F
=20 A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
pF
21
nC
ns
1
21
V
A
ns
nC
19
10
21
12
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QW-R502-207.E
UTD484
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current,I
D
(A)
25
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
20
15
10
On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
Drain Current,I
D
(A)
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=15A
On-Resistance vs. Junction Temperature
V
GS
=4.5V
V
GS
=10V
I
D
=20A
V
GS
=10V
5
0
0
4
Pulse width
≤80μs,
duty cycle
≤0.5%.
0.8
0.6
-25 -50
Pulse width
≤80μs,
duty cycle
≤0.5%.
8
12
16
Drain Current,I
D
(A)
20
0 25 50 75 100 125 150 175
Junction Temperature (°С)
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
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Reverse Drain Current,I
S
(A)
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Wireless Connectivity
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