UNISONIC TECHNOLOGIES CO., LTD
UTM4052
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
FEATURES
* N-Channel: 40V/7.5A
R
DS(ON)
= 30 mΩ (typ.)
@V
GS
=10V
R
DS(ON)
= 46 mΩ(typ.)
@
V
GS
= 5V
* P-Channel: -40V/-6A
R
DS(ON)
= 45 mΩ(typ.)
@
V
GS
= -10V
R
DS(ON)
= 52 mΩ(typ.)
@
V
GS
= -5V
* Super High Dense Cell Design
* Reliable and Rugged
Power MOSFET
SOP-8
1
TO-252-4
SYMBOL
D
G1
G2
S1
N-Channel
S2
P-Channel
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTM4052L-S08-R
UTM4052G-S08-R
UTM4052L-TN4-R
UTM4052G-TN4-R
UTM4052L-TN4-T
UTM4052G-TN4-T
Package
SOP-8
TO-252-4
TO-252-4
1.
S1
S1
S1
2.
G1
G1
G1
Pin Assignment
3. 4. 5. 6.
S2 G2 D D
D S2 G2 -
D S2 G2 -
7. 8.
D D
- -
- -
Packing
Tape Reel
Tape Reel
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-137.E
UTM4052
PIN CONFIGURATION
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
Power MOSFET
5
4
3
2
1
Gate 2
Source 2
Drain
Gate 1
Source 1
8
7
6
5
Drain
Drain
Drain
Drain
TO-252-4
SOP-8
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QW-R502-137.E
UTM4052
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise specified)
N-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
Power Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
P-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
STG
SYMBOL
V
DS
V
GS
I
D
I
DM
Power MOSFET
T
C
=25°C
T
C
=25°C
SOP-8
TO-252-4
RATINGS
40
±20
7.5
30
3.1
25
+150
-55 ~ +150
UNIT
V
V
A
A
W
W
°C
°C
RATINGS
UNIT
-40
V
±20
V
T
C
=25°C
-6
A
T
C
=25°C
-25
A
SOP-8
3.1
W
Power Dissipation (T
C
=25°C)
P
D
TO-252-4
25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in
2
pad area, t≤10sec.
THERMAL DATA
PARAMETER
SOP-8
TO-252-4
SOP-8
Junction to Case
TO-252-4
2
Note: Surface Mounted on 1in pad area, t≤10sec.
Junction to Ambient (Note)
SYMBOL
θ
JA
θ
JC
RATINGS
78
50
40
5
UNIT
°C/W
°C/W
°C/W
°C/W
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QW-R502-137.E
UTM4052
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250uA
V
DS
=32V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=7.5A
V
GS
=5V, I
D
=5A
Power MOSFET
MIN
40
TYP
MAX UNIT
V
uA
nA
V
mΩ
mΩ
pF
pF
pF
14
19
32
6
24
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
1
±100
1.3
2
30
46
480
70
50
7
10
17
3
17
2.2
4
0.8
21
16
MIN
-40
-1
±100
-1.3
-2
45
52
970
100
70
5
11
37
12
17
2.2
4
10
21
68
23
24
-2.5
50
73
TYP
2.5
38
62
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V,V
DS
=20V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
t
D(ON)
V
DS
=20V, V
GS
=10V, I
D
=1A,
Turn-ON Rise Time
t
R
R
G
=6Ω, R
L
=20Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note2)
Q
G
V
DS
=20V, V
GS
=10V, I
D
=7.5A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
T
J
=25℃, I
S
=2A, V
GS
=0V
Drain-Source Diode Forward Voltage(Note2)
V
SD
Diode Continuous Forward Current (Note3)
I
S
Reverse Recovery Time
t
RR
I
DS
=7.5A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
=0V, I
D
=-250uA
V
DS
=-32V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V, I
D
=-6A
V
GS
=-5V, I
D
=-3.5A
1.1
20
MAX UNIT
V
uA
nA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=0V,V
DS
=-20V,f=1.0MHz
V
DS
=-20V, V
GS
=-10V,
I
D
=-1A, R
G
=6Ω, R
L
=20Ω
V
DS
=-20V, V
GS
=-10V,
I
D
=-6A
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QW-R502-137.E
UTM4052
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
T
J
=25℃, I
S
=-2A, V
GS
=0V
Drain-Source Diode Forward Voltage(Note2)
V
SD
Diode Continuous Forward Current (Note3)
I
S
Reverse Recovery Time
t
RR
I
DS
=-6A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec
.
Power MOSFET
MIN
TYP
-0.8
17
10
MAX UNIT
-1.1
-18
V
A
ns
nC
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