UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT50P10
-50A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT50P10
is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance. It can also
withstand high energy in the avalanche.
FEATURES
* V
DS
= -100V
* I
D
= -50A
* R
DS(ON)
< 60mΩ @ V
GS
= -10V, I
D
= -20A
* High Switching Speed
ORDERING INFORMATION
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
UTT50P10L-TA3-T
UTT50P10G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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UTT50P10
PARAMETER
Gate-Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
GSS
±20
V
Continuous
I
D
-50
A
Drain Current
-90
A
Pulsed
I
DM
Power Dissipation
P
D
225
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θ
JC
RATINGS
0.55
UNIT
°C/W
Junction to Case
ELECTRICAL CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
-1
-500
+100
-100
-3
60
65
4200
250
110
80
76
740
200
-1.0
80
130
130
900
400
-1.5
120
µA
nA
nA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage
Forward
I
GSS
Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
Static Drain-Source On-State
V
GS
=-10V, I
D
=-20A
R
DS(ON)
Resistance
V
GS
=-4.5V, I
D
=-15A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=-50V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=-50V, V
GS
=-10V, I
D
=-50A, R
G
=1Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
F
=-20A, V
GS
=0V, Pulse test, t≤300μs,
Drain-Source Diode Forward Voltage
V
SD
duty cycle d≤2%
T
J
=25°C, I
F
=-20A, V
R
=-50V,
Body Diode Reverse Recovery Time
t
RR
di/dt=-100A/µs
I
D
=-250µA, V
GS
=0V
-100
V
DS
=0.8×Max.rating, V
GS
=0V, T
J
=25°C
V
DS
=0.8×Max.rating, V
GS
=0V, T
J
=125°C
V
GS
=+20V
V
GS
=-20V
-1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-607.b
UTT50P10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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