UNISONIC TECHNOLOGIES CO., LTD
UF1404
Preliminary
Power MOSFET
162A, 40V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UF1404
is a N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
perfect R
DS(ON)
and high switching speed.
The UTC
UF1404
is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
FEATURES
* R
DS(ON)
= 4mΩ @ V
GS
=10V, I
D
=95A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
UF1404L-TA3-T
Note: Pin Assignment: G: Gate
Halogen Free
UF1404G-TA3-T
D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-641.a
UF1404
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
RATINGS
UNIT
40
V
±20
V
T
C
=25°C
162 (Note 5)
A
I
D
Continuous (V
GS
=10V)
Drain Current
T
C
=100°C
115 (Note 5)
A
Pulsed (Note 2)
T
C
=25°C
I
DM
650
A
Avalanche Current (Note 2)
I
AR
95
A
Single Pulsed (Note 3)
E
AS
519
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Power Dissipation (T
C
=25°C)
P
D
200
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. Starting T
J
=25°C, L=0.12mH, R
G
=25Ω, I
AS
=95A
4. I
SD
≤95A,
di/dt≤150A/µs, V
DD
≤BV
DSS
, T
J
≤175°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.625
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-641.a
UF1404
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Reference to 25°C, I
D
=1mA
V
DS
=40V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=32V, V
GS
=0V, T
J
=150°C
Forward
V
GS
=+20V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=95A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
I
D
=95A, V
DS
=32V, V
GS
=10V
Gate to Source Charge
Q
GS
(Note 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=20V, I
D
=95A, R
G
=2.5Ω,
R
D
=0.21Ω (Note 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Internal Drain Inductance
L
D
Between lead, 6 mm
(0.25in.) from package
Internal Source Inductance
L
S
and center of die contact
MIN TYP MAX UNIT
40
V
0.036
V/°C
20
µA
250 µA
+200 nA
-200 nA
4.0
4
V
mΩ
nF
nF
nF
200
60
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
3.5
7.36
1.68
0.24
160
35
42
17
140
72
26
4.5
7.5
Maximum Body-Diode Continuous Current
I
S
MOSFET symbol showing
162
A
(Note 4)
the integral reverse p-n
Maximum Body-Diode Pulsed Current
junction diode.
I
SM
650
A
(Note 1)
Drain-Source Diode Forward Voltage
V
SD
I
S
=95A, V
GS
=0V, T
J
=25°C (Note 2)
1.3
V
Body Diode Reverse Recovery Time
t
RR
71
110 ns
I
F
=95A, di/dt=100A/µs,
T
J
=25°C (Note 2)
Body Diode Reverse Recovery Charge
Q
RR
180 270 µC
Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature
2. Pulse width≤300µs, Duty cycle≤2%
3. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 80%
V
DSS
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current
is 75A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-641.a
UF1404
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
R
D
90%
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-641.a
UF1404
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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www.unisonic.com.tw
5 of 6
QW-R502-641.a
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