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UF840L-TQ2-T

Description
8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size432KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UF840L-TQ2-T Overview

8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET

UF840L-TQ2-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
Other featuresAVALANCE RATED
Avalanche Energy Efficiency Rating (Eas)510 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UF840
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Power MOSFET
FEATURES
* Low R
DS(ON)
=0.85Ω
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TQ2-R
UF840G-TQ2-R
UF840L-TQ2-T
UF840G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-047,F

UF840L-TQ2-T Related Products

UF840L-TQ2-T UF840G-TF3-T UF840_11
Description 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code D2PAK TO-220AB -
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 -
Contacts 4 3 -
Reach Compliance Code compli compli -
Other features AVALANCE RATED AVALANCE RATED -
Avalanche Energy Efficiency Rating (Eas) 510 mJ 510 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 500 V 500 V -
Maximum drain current (ID) 8 A 8 A -
Maximum drain-source on-resistance 0.85 Ω 0.85 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-263AB TO-220AB -
JESD-30 code R-PSSO-G2 R-PSFM-T3 -
Number of components 1 1 -
Number of terminals 2 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 32 A 32 A -
Certification status Not Qualified Not Qualified -
surface mount YES NO -
Terminal form GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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