BH616UV1611AIG70 datasheet, PDF

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BH616UV1611AIG70: DescriptionUltra Low Power/High Speed CMOS SRAM 1M X 16 bit; File Size220KB，10 Pages; ManufacturerBSI; Websitehttp://www.brilliancesemi.com/

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BH616UV1611AIG70 Overview

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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Ultra Low Power/High Speed CMOS SRAM

1M X 16 bit

Pb-Free and Green package materials are compliant to RoHS

BH616UV1611

FEATURES

Wide V

low operation voltage : 1.65V ~ 3.6V

Ultra low power consumption :

= 3.6V

Operation current : 12mA (Max.)at 55ns

2mA (Max.) at 1MHz

Standby current : 30uA (Max.) at 3.6V/85 C

= 1.2V

-55/-70

Data retention current : 15uA(Max.) at 85 C

55ns (Max.) at V

=3.0V

70ns (Max.) at V

=1.8V

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

I/O Configuration x8/x16 selectable by LB and UB pin.

Three state outputs and TTL compatible

Fully static operation, no clock, no refresh

Data retention supply voltage as low as 1.0V

DESCRIPTION

The BH616UV1611 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum standby current of

39uA at 3.6V/85 C and maximum access time of 55/70ns at

3.0V/1.8V.

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH616UV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV1611 is made with two chips of 8Mbit SRAM by

stacked multi-chip-package.

The BH616UV1611 is available in 48-ball BGA package.

High speed access time :

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

OPERATING

TEMPERATURE

STANDBY

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=1.8V

10MHz

Max.

=3.6V

=1.8V

1MHz

=3.6V

10MHz

Max.

1MHz

BH616UV1611AI

Industrial

-40 C to +85 C

30uA

25uA

2mA

6mA

12mA

1.5mA

5mA

8mA

BGA-48-0608

PIN CONFIGURATIONS

DQ8

DQ9

VSS

VCC

DQ14

DQ15

A18

DQ10

DQ11

DQ12

DQ13

A19

A17

A14

A12

A16

A15

A13

A10

CE1

DQ1

DQ3

DQ4

DQ5

A11

CE2

DQ0

DQ2

VCC

VSS

DQ6

DQ7

BLOCK DIAGRAM

A12

A11

A10

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 16384

16384

DQ0

DQ15

CE2, CE1

Data

Input

Buffer

Data

Output

Buffer

1024

Column Decoder

Control

Address Input Buffer

Column I/O

Write Driver

Sense Amp

A19 A18 A17 A15 A14 A13 A16 A2 A1 A0

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

Detailed product characteristic test report is available upon request and being accepted.

R0201-BH616UV1611

Revision

1.1

Oct.

2008

BH616UV1611AIG70 Related Products

	BH616UV1611AIG70	BH616UV1611AIP70	BH616UV1611_08	BH616UV1611AIP55	BH616UV1611AIG55
Description	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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