UNISONIC TECHNOLOGIES CO., LTD
MMDT8050S
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
The UTC
MMDT8050S
is a Dual NPN epitaxial planar transistor. It
has low V
CE(sat)
performance, and the transistor elements are
independent, eliminating interference.
FEATURES
* Low V
CE(sat)
, V
CE(sat)
=40mV (typ.)@I
C
/ I
B
= 50mA / 2.5mA
* Transistor elements are independent, eliminating interference.
* Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
6
5
4
Tr1
1
2
3
Tr2
ORDERING INFORMATION
Ordering Number
Lead Free
MMDT8050SL-AL6-R
MMDT8050SL-AL6-R
Halogen Free
MMDT8050SG-AL6-R
Package
SOT-363
Packing
Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) AL6: SOT-363
(3) Halogen Free, L: Lead Free
MARKING
N24
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R218-012.a
MMDT8050S
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current (DC)
I
C
800
mA
Collector Current (Pulse)
I
CP
1.5 (Note 2)
A
Power Dissipation
P
D
200 (total) (Note 3)
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, P
W
=10ms
3. 150mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=100µA, I
E
=0
BV
CEO
I
C
=2mA, I
B
=0
BV
EBO
I
E
=100µA, I
C
=0
I
CBO
V
CB
=30V, I
E
=0
I
EBO
V
EB
=6V, I
C
=0
V
CE(sat)
1 I
C
=50mA, I
B
=2.5mA
Collector-Emitter Saturation Voltage
V
CE(sat)
2 I
C
=400mA, I
B
=20mA
(Note 1)
V
CE(sat)
3 I
C
=800mA, I
B
=80mA
Base-Emitter Voltage
V
BE(on)
V
CE
=1V, I
C
=10mA
h
FE
1
V
CE
=1V, I
C
=100mA
DC Current Gain
h
FE
2
V
CE
=1V, I
C
=500mA
h
FE
3
V
CE
=2V, I
C
=50mA
Current Gain-Bandwidth Product
f
T
V
CE
=5V, I
C
=50mA, f=100MHz
Output Capacitance
C
obo
V
CB
=10V, f=1MHz
Note: 1. Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
MIN TYP MAX UNIT
40
V
25
V
6
V
0.5
µA
0.5
µA
40
60
mV
0.2
0.3
V
0.3
0.5
V
1
V
180
560
40
82
150
MHz
15
pF
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-012.a
Microcontroller MCU
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