UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
8N60
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 1.2Ω@V
GS
= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
TO-220
8N60L-TF1-T
8N60G-TF1-T
TO-220F1
8N60L-TF2-T
8N60G-TF2-T
TO-220F2
8N60L-TF3-T
8N60G-TF3-T
TO-220F
8N60L-T2Q-T
8N60G-T2Q-T
TO-262
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-115.G
8N60
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-115.G
8N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
8
A
8
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
32
A
230
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
147
W
Power Dissipation
TO-220F/TO-220F1
P
D
48
W
TO-220F2
50
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 7.1mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤7.5A,
di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.85
2.6
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
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3 of 9
QW-R502-115.G
8N60
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
600
V
V
DS
= 600 V, V
GS
= 0V
10
µA
100 nA
Forward
V
GS
= 30 V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4A
1.0 1.2
Ω
DYNAMIC CHARACTERISTICS
965 1255 pF
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
105 135 pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
12
16
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
16.5 45
ns
Turn-On Rise Time
t
R
60.5 130 ns
V
DD
= 300V, I
D
= 8A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
81 170 ns
Turn-Off Fall Time
t
F
64.5 140 ns
28
36
nC
Total Gate Charge
Q
G
V
DS
= 480V,I
D
=8A,
Gate-Source Charge
Q
GS
4.5
nC
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 8A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
8
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
32
A
Forward Current
365
ns
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 8A,
dI
F
/dt = 100 A/µs (Note 2)
Reverse Recovery Charge
Q
RR
3.4
µC
Notes: 1. Pulse Test: Pulse width
≤300μs,
Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-115.G
8N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-115.G
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