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8N60G-TF3-T

Description
8A, 600V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size237KB,9 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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8N60G-TF3-T Overview

8A, 600V N-CHANNEL POWER MOSFET

8N60G-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)230 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)7.5 A
Maximum drain current (ID)7.5 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Maximum pulsed drain current (IDM)30 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
8N60
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 1.2Ω@V
GS
= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
TO-220
8N60L-TF1-T
8N60G-TF1-T
TO-220F1
8N60L-TF2-T
8N60G-TF2-T
TO-220F2
8N60L-TF3-T
8N60G-TF3-T
TO-220F
8N60L-T2Q-T
8N60G-T2Q-T
TO-262
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-115.G

8N60G-TF3-T Related Products

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Description 8A, 600V N-CHANNEL POWER MOSFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 8A, 600V N-CHANNEL POWER MOSFET 8A, 600V N-CHANNEL POWER MOSFET 8A, 600V N-CHANNEL POWER MOSFET 8A, 600V N-CHANNEL POWER MOSFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB - TO-262AA TO-262AA TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3 3 3 3 3
Reach Compliance Code compli - compli compli compli compli compli
Avalanche Energy Efficiency Rating (Eas) 230 mJ - 230 mJ 230 mJ 230 mJ 230 mJ 230 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V - 600 V 600 V 600 V 600 V 600 V
Maximum drain current (Abs) (ID) 7.5 A - 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A
Maximum drain current (ID) 7.5 A - 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A
Maximum drain-source on-resistance 1.2 Ω - 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-262AA TO-262AA TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSIP-T3 R-PSIP-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1 1 1 1
Number of terminals 3 - 3 3 3 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - IN-LINE IN-LINE FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 48 W - 147 W 147 W 147 W 48 W 147 W
Maximum pulsed drain current (IDM) 30 A - 30 A 30 A 30 A 30 A 30 A
surface mount NO - NO NO NO NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON
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