Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR10100C is available in standard TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
MBR10100C
Main Product Characteristics
I
F(AV)
V
RRM
T
J
V
F
(max)
2×5A
100V
150°C
0.75V
Mechanical Characteristics
Features
•
•
•
•
•
High Surge Capacity
150°C Operating Junction Temperature
10A Total (5A Per Diode Leg)
Guard-ring for Stress Protection
Pb-free Packages are available
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
•
•
•
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10100C
Mar. 2011
Rev. 1. 3
1
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Pin Configuration
T Package
(TO-220-3) (Optional)
(TO-220-3 (2))
MBR10100C
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR10100C (Top View)
Figure 3. Internal Structure of MBR10100C
Mar. 2011
Rev. 1. 3
2
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
MBR10100C
-
E1: Lead Free
G1: Green
Blank: Tube
MBR10100C
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
Package
TO-220-3 (2)
TO-220F-3
Part Number
Lead Free
MBR10100CT-
E1
MBR10100CTF
-E1
Marking ID
Lead Free
MBR10100CT-
E1
MBR10100CTF-
E1
Green
MBR10100CT-
G1
MBR10100CTF
-G1
Green
MBR10100CT-
G1
MBR10100CTF-
G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Mar. 2011
Rev. 1. 3
3
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
=136°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20kHz) T
C
=134°C
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single Phase,
60Hz)
Operating Junction Temperature Range (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
R
)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
MBR10100C
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
J
T
STG
dv/dt
Value
100
5
10
100
150
-55 to 150
10000
> 400
> 8000
Unit
V
A
A
A
°C
°C
V/µs
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
<
1/θ
JA
.
Recommended Operating Conditions
Parameter
Symbol
θ
JC
Maximum Thermal Resistance
θ
JA
Junction
Ambient
to
Condition
Junction to Case
Value
TO-220-3/
TO-220-3 (2)
TO-220F-3
TO-220-3/
TO-220-3 (2)
TO-220F-3
3.0
4.5
60
60
Unit
°C/W
°C/W
Mar. 2011
Rev. 1. 3
4
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
MBR10100C
Symbol
Conditions
I
F
=5A, T
C
=25°C
I
F
=5A, T
C
=125°C
I
F
=10A, T
C
=25°C
I
F
=10A, T
C
=125°C
Value
0.85
0.75
0.95
0.85
6.0
Unit
V
F
V
Maximum Instantaneous Reverse
Current (Note 3)
I
R
Rated
DC
T
C
=125°C
Rated
DC
T
C
=25°C
Voltage,
Voltage,
mA
0.1
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011
Rev. 1. 3
5
BCD Semiconductor Manufacturing Limited
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