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MBR10100CT-G1

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size297KB,10 Pages
ManufacturerBCD Semi(Diodes)
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MBR10100CT-G1 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR10100CT-G1 Parametric

Parameter NameAttribute value
MakerBCD Semi(Diodes)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR10100C is available in standard TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
MBR10100C
Main Product Characteristics
I
F(AV)
V
RRM
T
J
V
F
(max)
2×5A
100V
150°C
0.75V
Mechanical Characteristics
Features
High Surge Capacity
150°C Operating Junction Temperature
10A Total (5A Per Diode Leg)
Guard-ring for Stress Protection
Pb-free Packages are available
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10100C
Mar. 2011
Rev. 1. 3
1
BCD Semiconductor Manufacturing Limited

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Description 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Maker BCD Semi(Diodes) BCD Semi(Diodes) BCD Semi(Diodes) -
Reach Compliance Code unknow unknow unknow -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
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