FM120-M
DTC114ECA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
Features
profile surface mounted application in order to
•
Low
SOT-23
.122(3.10)
.106(2.70)
0.012(0.3) Typ.
•
•
•
•
•
•
Pb-Free package is
space.
optimize board
available
•
product for packing code suffix
RoHS
Low power loss, high efficiency.
”G”
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
Epoxy
Guardring for overvoltage protection.
•
meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
•
Ultra high-speed switching.
Built-in
Silicon epitaxial
enable the
metal silicon junction.
inverter circuit
•
bias resistors
planar chip,
configuration of an
without
Lead-free parts meet environmental standards of
•
connecting external input resistors
The bias resistors consist of thin-film resistors with complete
MIL-STD-19500 /228
isolation to allow negative biasing of the input. They also have the
•
RoHS product for packing code suffix "G"
advantage of almost completely eliminating
"H"
Halogen free product for packing code suffix
parasitic effects.
Only the on/off conditions need to be set for operation, making
Mechanical data
device design easy
•
Epoxy : UL94-V0 rated flame retardant
0.031(0.8) Typ.
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
.006(0.15)MIN.
0.040(1.0)
0.024(0.6)
•
Case : Molded plastic, SOD-123H
,
•
maximum ratings @ 25
solderable per MIL-STD-750
Terminals :Plated terminals,
Absolute
Symbol
V
CC
V
IN
I
O
P
d
T
j
T
stg
0.031(0.8) Typ.
Electrical Characteristics @ 25
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
.003(0.08)
RATINGS
Symbol
Parameter
V
I(off)
Input
Marking Code
voltage (V
CC
=5V, I
O
=100A)
V
I(on)
(V
Reverse Voltage
Maximum Recurrent Peak
O
=0.3V, I
O
=10mA)
V
O(on)
=
Output voltage (I
O
/I
I
10mA/0.5mA)
Maximum RMS Voltage
(V 5V)
Input current
I
I
=
I
Maximum DC Blocking Voltage
=50V, V
I
0)
I
O(off)
Output current (V
CC
=
G
I
DC current gain (V
O
=5V, I
Current
=
Maximum Average Forward Rectified
O
5mA)
R
1
Input resistance
R
2
/R
1
Forward Surge Current 8.3 ms single half sine-wave
Resistance ratio
Peak
Transition frequency
superimposed on rated load (JEDEC method)
f
T
(V
O
=10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Min
Typ
Max
Unit
---
12
---
13
V
0.5
14
15
16
18
10
115
120
---
RRM
---
20
3.0
30
V
40
50
60
80
100
150
200
V
.004(0.10)MAX.
---
0.1
0.3
V
35
42
56
70
105
140
V
---
RMS
---
14
0.88
21
mA
28
50
60
80
100
150
200
---
DC
---
20
0.5
30
A
40
V
30
I
O
---
---
1.0
.020(0.50)
7.0
10
K¡
13
.012(0.30)
0.8
1.0
1.2
30
I
FSM
---
250
---
MHz
Dimensions in inches and (millimeters)
40
R
ΘJA
120
C
J
-55 to +125
-55 to +150
T
J
.083(2.10)
.110(2.80)
•
•
•
Method 2026
Parameter
Polarity : Indicated by cathode band
Supply voltage
Input voltage
Mounting Position : Any
Output current
Weight
dissipation
Power
: Approximated 0.011 gram
Junction temperature
Storage temperature
RATINGS AND
MAXIMUM
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
---
50
---
V
-10
---
40
V
---
50
100
mA
---
200
---
mW
---
150
---
-55
---
150
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
MARKING:
F
V
24
Suggested Solder
Pad Layout
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.50
0.70
.035
.900
.031
.800
TSTG
-
65
to +175
.055(1.40)
.035(0.89)
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
R
0.5
10
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FM120-M
DTC114ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package
Typical Characteristics
outline
10
100
30
10
3
1
ON Characteristics
better reverse leakage current and thermal resistance.
V
order
•
Low profile surface mounted application in
O
=0.3V
to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
=25
℃
a
•
Silicon epitaxial
T
planar chip, metal silicon junction.
100
℃
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OFF Characteristics
SOD-123H
T
a
=100
℃
V
CC
=5V
3
25
℃
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(mA)
I
O
(V)
1
0.071(1.8)
0.056(1.4)
V
I(ON)
OUTPUT CURRENT
INPUT VOLTAGE
0.3
0.1
0.3
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.1
•
Case : Molded plastic, SOD-123H
0.1
1
10
100
3
30
0.3
,
•
Terminals :Plated terminals,
I
solderable per MIL-STD-750
OUTPUT CURRENT
(mA)
O
0.01
0.0
0.031(0.8) Typ.
0.4
0.8
1.2
1.6
0.031(0.8) Typ.
2.0
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1
•
Polarity : Indicated by cathode band
V
O(ON)
•
Mounting Position : Any
—— I
O
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1000
G
I
——
I
O
V
O
=5V
I
O
/I
I
=20
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
a
=100
℃
OUTPUT VOLTAGE
0.1
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
0.03
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
30
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
12
20
14
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
0.3
Single phase half wave, 60Hz, resistive of inductive load.
T
a
=100
℃
For capacitive load, derate current by 20%
25
℃
25
℃
(V)
V
O(ON)
G
I
100
13
30
21
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
10
14
40
28
40
15
50
35
50
16
60
60
18
80
56
10
100
70
115
150
105
150
120
200
140
42
1.0
3
30
40
120
I
O
20
30
3
80
100
200
Peak Forward Surge Current 8.3 ms single half sine-wave
0.01
superimposed on rated load (JEDEC method)
1
3
10
30
100
1
0.1
10
30
100
0.3
1
Typical Thermal Resistance (Note 2)
Operating Temperature Range
C
Storage Temperature Range
O
10
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
(mA)
Typical Junction Capacitance (Note 1)
-55 to +125
400
-55 to +150
P
D
-
65
to +175
—— T
a
——
V
R
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
8
Maximum Average Reverse Current at @T A=25℃
C
O
(pF)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
350
V
F
@T A=125℃
0.50
(mW)
300
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
I
R
POWER DISSIPATION
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
OUTPUT CAPACITANCE
6
P
D
250
200
DTC114ECA
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T (
℃
WILLAS
)
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
ADI Reference Circuit
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