FM120-M
DTC114EE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
package is available
Pb-Free
High surge capability.
•
Guardring for overvoltage protection.
RoHS
•
Ultra high-speed switching.
product for packing code suffix ”G”
Halogen
Silicon epitaxial planar chip, metal silicon junction.
•
free product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
Epitaxial Planar Die Construction
MIL-STD-19500 /228
Untrl Small Surface Mount Package
•
RoHS product for packing code suffix "G"
Built-In Biasing Resistors
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
•
Features
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
•
Epoxy
Mechanical data
meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
•
Epoxy : UL94-V0 rated flame retardant
Marking:24
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Absolute maximum
Method 2026
25
ratings @
.014(0.35)
.010(0.25)
.004(0.10)MIN.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Electrical Characteristics @ 25
Storage Temperature Range
TSTG
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.014(0.35)
.006(0.15)
0.85
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.035(0.90)
.028(0.70)
Maximum Recurrent Peak Reverse Voltage
V
RRM
Symbol
Parameter
Min
Typ
Maximum
Input voltage (V =5V, I =100 A)
RMS Voltage
V
0.5
RMS
---
V
I(off)
CC
O
---
V
DC
---
V
I(on)
Maximum DC Blocking
(V
O
=0.3V, I
O
=10mA)
Voltage
V
O(on)
Output voltage (I
O
=10mA,I
i
=0.5mA)
---
---
Maximum Average Forward Rectified Current
I
O
I
I
Input current (V
I
=5V)
---
---
I
O(off)
Output current (V
CC
=50V, V
I
=0)
---
---
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
---
G
I
DC current gain (V
O
=5V, I
O
=5mA)
30
superimposed on rated load (JEDEC method)
R
1
Input resistance
7
10
Typical Thermal Resistance (Note 2)
R
ΘJA
1.0
R
2
/R
1
Resistance ratio
0.8
Transition frequency
Typical Junction Capacitance (Note 1)
---
C
J
250
f
T
(V =10V, I =5mA, f=100MHz)
Operating Temperature Range
T
J
12
20
Max
14
---
20
3.0
0.3
0.88
0.5
---
13
0.2
13
30
Unit
21
V
30
V
V
mA
A
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
.069(1.75)
.057(1.45)
.043(1.10)
in inches and (millimeters)
Symbol
•
Polarity : Indicated by cathode band
Min
Parameter
Typ
Max
Unit
Dimensions
---
V
Supply Voltage
---
50
V
CC
.035(0.90)
Mounting Position : Any
•
Collector current
I
C
---
50
100
mA
40
V
V
IN
-10
---
•
Input voltage
Weight : Approximated 0.011 gram
P
d
Power dissipation
---
150
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
10
100
70
115
150
105
150
120
200
140
200
.008(0.20)
100
80
.004(0.10)
K
---
MHz
-55 to +125
40
.004(0.10)MAX.
120
-55 to +150
V
F
@T A=125℃
0.50
0.70
0.5
0.9
0.92
I
R
Dimensions
10
inches and (millimeters)
in
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTC114EE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
Typical Characteristics
10
100
30
10
OUTPUT CURRENT
INPUT VOLTAGE
3
1
better reverse
ON Characteristics
leakage current and thermal resistance.
V
O
order
•
Low profile surface mounted application in
=0.3V
to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
=25
℃
•
Silicon epitaxial
T
a
planar chip, metal silicon junction.
100
℃
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
OFF Characteristics
SOD-123H
T
a
=100
℃
V
CC
=5V
3
25
℃
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(mA)
I
O
(V)
1
0.071(1.8)
0.056(1.4)
V
I(ON)
0.3
0.1
0.3
Mechanical data
0.03
•
Epoxy : UL94-V0 rated flame retardant
0.1
•
Case : Molded plastic, SOD-123H
0.1
1
10
100
3
30
0.3
,
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
terminals,
(mA)
OUTPUT
O
0.040(1.0)
0.024(0.6)
0.01
0.0
0.031(0.8) Typ.
0.4
0.8
1.2
1.6
0.031(0.8) Typ.
2.0
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1
•
Polarity : Indicated by cathode band
V
O(ON)
—— I
O
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1000
G
I
——
I
O
V
O
=5V
I
O
/I
I
=20
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
Ratings at 25℃ ambient temperature unless otherwise specified.
0.3
Single phase half wave, 60Hz, resistive of inductive load.
T
a
=100
℃
For capacitive load, derate current by 20%
25
℃
0.1
T
a
=100
℃
25
℃
(V)
OUTPUT VOLTAGE
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
DC CURRENT GAIN
V
O(ON)
G
I
100
Marking Code
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
12
20
14
20
13
30
21
30
Maximum RMS Voltage
0.03
Maximum DC Blocking Voltage
10
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
3
40
120
I
O
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
30
3
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
0.01
superimposed on rated load (JEDEC method)
1
3
10
30
10
30
100
100
1
0.1
0.3
1
Typical Thermal Resistance (Note 2)
Operating Temperature Range
C
Storage Temperature Range
O
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
(mA)
Typical Junction Capacitance (Note 1)
-55 to +125
400
-55 to +150
P
D
-
——
+175
65
to
T
a
——
(pF)
10
V
R
TSTG
f=1MHz
T
a
=25
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
8
Rated DC Blocking Voltage
C
O
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
350
V
F
I
R
0.50
0.70
0.85
0.9
0.92
(mW)
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
6
300
0.5
10
OUTPUT CAPACITANCE
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
POWER DISSIPATION
NOTES:
2- Thermal Resistance From Junction to Ambient
4
P
D
250
200
150
DTC114EE
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
2012-
0
WILLAS ELECTRONIC CORP.
T (
℃
WILLAS
)
ELECTRONIC COR
京公网安备 11010802033920号
EEWORLD
