PbSe photoconductive detectors
P9696 series
P3207-07
Infrared detectors with fast response and
high sensitivity in 5 m wavelength band
Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and
can operate at room temperature, making them widely used in gas analyzers, etc. Cooling these detectors increases the sensitiv-
ity and improves the S/N. So cooled type PbSe photoconductive detectors are widely used in high-precision photometry such as
for analytical instruments.
Features
High-speed response
Room temperature type and TE-cooled type available
Lower temperature detection limit: approx. 50 °C
With bandpass ¿lter: P3207-07
Applications
Gas analyzer (CH
4
, CO, CO
2
)
Radiation thermometer
Flame detector
Film thickness gauge
Accessories (options)
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
Temperature controller for TE-cooled type
A3179
A3179-01
C1103-04
Ampli¿er for PbS/PbSe photoconductive detector C3757-02
Infrared detector module with preamp Non-cooled type P4245
Cooled type
P4639
Speci¿cations/Absolute maximum ratings
Dimensional
outline
Active
area
(mm)
2×2
3×3
2×2
One-stage
TE-cooled
Two-stage
TE-cooled
2
3
2
3
×
×
×
×
2
3
2
3
100
1.5
0.2
1.0
-30 to +50
-55 to +60
Absolute maximum ratings
Thermistor
TE-cooler
Operating
Supply
*
1
Storage
power
voltage
current
temperature temperature
dissipation consumption
Vs
Topr
Tstg
(mW)
(A)
(V)
(°C)
(°C)
-
-
Type No.
Package
Cooling
P9696-02
P9696-03
P3207-07
P9696-102
P9696-103
P9696-202
P9696-203
TO-5
TO-5
(with filter)
TO-8
Non-cooled
*1:
Voltage applied to a PbSe detector through a load resistor
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1
PbSe photoconductive detectors
P9696 series, P3207-07
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
condition
Cut-off
sensitivity
wavelength
Element
wavelength
Oc
temperature
Op
T
(°C)
P9696-02
P9696-03
P3207-07
*
2
P9696-102
P9696-103
P9696-202
P9696-203
25
-10
-20
(m)
4.0
4.3
4.1
4.2
5.1
5.2
(m)
4.8
Photo sensitivity
S
*
3
O=Op
Vs=15 V
Min.
(V/W)
1.5 × 10
3
6.7 × 10
2
1.4 × 10
3
5.6 × 10
3
2.5 × 10
3
6.7 × 10
3
3.0 × 10
3
D*
(500, 600, 1)
D*
(Op, 600, 1)
Rise time
tr
0 to 63 %
Max.
(s)
10
Dark
resistance
Rd
Type No.
Typ.
Min.
Typ.
(V/W)
(cm · Hz
1/2
/W) (cm · Hz
1/2
/W) (cm · Hz
1/2
/W)
3.0 × 10
3
1 × 10
8
2.5 × 10
8
2.5 × 10
9
1.3 × 10
3
1.8 × 10
3
-
-
2 × 10
9
7.5 × 10
3
2.5 × 10
8
5 × 10
8
5 × 10
9
3.3 × 10
3
1 × 10
4
5 × 10
8
1 × 10
9
1 × 10
10
4.7 × 10
3
(M:)
0.1 to 3
20
0.5 to 10
*2:
Half width 400 nm
*3:
Chopping frequency=600 Hz, load resistance=nearly equal to detector dark resistance
Spectral response
P9696 series
10
11
(Typ.)
10
10
P3207-07
(Typ. T=25 °C)
D* (λp, 600, 1) (cm · Hz
1/2
/W)
10
10
-20 °C
D* (λ, 600, 1) (cm · Hz
1/2
/W)
10
9
-10 °C
10
9
25 °C
10
8
10
8
1
2
3
4
5
6
7
10
7
1
2
3
4
5
6
7
Wavelength (μm)
KIRDB0342EB
Wavelength (μm)
KIRDB0391EB
2
PbSe photoconductive detectors
P9696 series, P3207-07
S/N vs. supply voltage (P9696-02)
1600
1400
1200
S/N vs. chopping frequency
20
(Typ. Ta=25 °C)
Light source: black body 500 K
Incident energy: 16.7 μW/cm
2
Chopping frequency: 600 Hz
Frequency bandwidth: 60 Hz
Supply voltage is the
value which contains
load resistance.
S (Signal)
10
4
(Ta=25 °C)
Light source: black body 500 K
2
Incident energy: 16.7 μW/cm
Supply voltage: 15 V
S/N
15
10
3
Signal (μV)
Noise (μV)
1000
800
600
S/N (relative value)
S (Signal)
10
2
N (Noise)
10
1
10
N (Noise)
400
200
0
0
120
5
0
20
40
60
80
100
10
0
10
1
10
2
10
3
Supply voltage (V)
KIRDB0440EA
Chopping frequency (Hz)
KIRDB0441EA
Increasing the chopping frequency reduces the
1/f noise and results in an S/N improvement. The
S/N can also be improved by narrowing the noise
bandwidth using a lock-in ampli¿er.
Photo sensitivity vs. element temperature
10
3
(Typ. Ta=25 °C)
Light source: black body 500 K
Supply voltage: 15 V
Incident energy: 16.7 μW/cm
2
Chopping frequency: 600 Hz
Dark resistance, rise time vs. element temperature
10
3
(Typ. Ta=25 °C)
Relative sensitivity
Dark resistance
10
2
Relative value
10
2
Rise time
10
1
-20
-10
0
10
20
30
40
50
10
1
-20
-10
0
10
20
30
40
50
Element temperature (°C)
KIRDB0442EA
Element temperature (°C)
KIRDB0443EA
Cooling the device enhances its sensitivity, but the
sensitivity also depends on the load resistance in
the circuit.
3
PbSe photoconductive detectors
P9696 series, P3207-07
Linearity
10
2
Cooling characteristics of TE-cooler
(Typ. Ta=25 °C, fully illuminated)
40
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
Element temperature (
°
C)
10
1
20
Relative sensitivity
10
0
0
One-stage
TE-cooled type
10
-1
-20
10
-2
Dependent on NEP
10
-3
-40
Two-stage
TE-cooled type
-60
10
-6
10
-5
10
-4
10
-3
10
-2
10
-7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Incident energy (W/cm
2
)
KIRDB0056EA
Current (A)
KIRDB0185EA
By making the incident light spot smaller than the
active area, the upper limit of the linearity be-
comes lower.
Current vs. voltage characteristics of TE-cooler
1.6
1.4
1.2
One-stage
TE-cooled type
(Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W)
Thermistor temperature characteristic
10
6
(Typ.)
Current (A)
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Two-stage
TE-cooled type
Resistance (Ω)
10
5
10
4
10
3
-40
-30
-20
-10
0
10
20
30
Voltage (V)
KIRDB0115EB
Element temperature (
°
C)
KIRDB0116EA
Connection example (P9696-203)
Cable (supplied with C3757-02)
2-conductor
shielded cable
P9696-203
+
A3179-01
Detector and
heatsink
BNC connector cable
(sold separately)
C3757-02
C1103-04
Power supply for amp
Amp
Lock-in amp or
spectrum analyzer
Signal
processing circuit
Temperature
controller
C4696
Chopper
Cable (supplied with C1103-04)
Connect the C1103-04 and power supply
ground terminals together.
KIRDC0093EA
4
PbSe photoconductive detectors
P9696 series, P3207-07
Dimensional outlines (unit: mm)
P9696-02/-03
9.1 ± 0.3
8.1 ± 0.1
Window
5.5 ± 0.1
P3207-07
9.1 ± 0.3
8.1 ± 0.1
4.2 ± 0.2
2.1 ± 0.2
3.0 ± 0.2
18 Min.
Detector
Detector
GND
Chip position accuracy
with respect to the cap center
0.2 mm Max.
KIRDA0118EB
2.1 ± 0.2
Filter
0.4 Max.
18 Min.
0.45
Lead
0.45
Lead
5.1 ± 0.2
0.
8
±
0.
2
1.5 Max.
5.1 ± 0.2
Detector
Detector
GND
Chip position accuracy
with respect to the cap center
0.2 mm Max.
KIRDA0183EB
1.5 Max.
P9696-102/-103
15.3 ± 0.2
14 ± 0.2
6.4 ± 0.2
Window
10 ± 0.2
P9696-202/-203
15.3 ± 0.2
14 ± 0.2
10 ± 0.2
6.7 ± 0.2
10.2 ± 0.2
Detector
Detector
TE-cooler (-)
TE-cooler (+)
Thermistor
Chip position accuracy
with respect to the cap center
0.3 mm Max.
KIRDA0128EB
Window
10 ± 0.2
4.3 ± 0.2
12 Min.
Photosensitive
surface
0.45
Lead
10.2 ± 0.2
0.45
Lead
5.1 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
12 Min.
Detector
Detector
TE-cooler (-)
TE-cooler (+)
Thermistor
Chip position accuracy
with respect to the cap center
0.3 mm Max.
KIRDA0125EB
Photosensitive
surface
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
0.4 Max.
Photosensitive
surface
Photosensitive
surface
4.2 ± 0.2
Window
5.5 ± 0.1
8
0.
±
2
0.
45°
5
Cat. No. KSPD1073E02 Jun. 2009 DN
MCU
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