Preliminary
Data Sheet
NP160N055TUJ
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0022EJ0100
Rev.1.00
Jul 01, 2010
The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Low on-state resistance
⎯
R
DS(on)
= 3.0 mΩ MAX. (V
GS
= 10 V, I
D
= 80 A)
•
Low Ciss: Ciss = 6900 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
•
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
1
NP160N055TUJ -E1-AY
∗
1
NP160N055TUJ -E2-AY
∗
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 pcs/reel
Package
TO-263-7pin, Taping (E1 type)
TO-263-7pin, Taping (E2 type)
Note:
∗
1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
∗
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
2
Repetitive Avalanche Current
∗
2
Repetitive Avalanche Energy
∗
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
Ratings
55
±20
±160
±640
250
1.8
175
−55
to
+175
54
291
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes:
∗
1. PW
≤
10
μ
s, Duty Cycle
≤
1%
∗
2. T
ch(peak)
≤
150°C, R
G
= 25
Ω
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.60
83.3
°C/W
°C/W
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
NP160N055TUJ
Chapter Title
Electrical Characteristics (T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
∗
1
Drain to Source On-state
1
Resistance
∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
∗
1
Reverse Recovery Time
Reverse Recovery Charge
Note:
∗
1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
Min
Typ
2.0
55
3.0
110
2.4
6900
760
290
40
20
90
10
115
28
36
0.9
57
115
Max
1
±100
4.0
3.0
10350
1140
530
90
50
180
30
180
Unit
μ
A
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 55 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 5 V, I
D
= 80 A
V
GS
= 10 V, I
D
= 80 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 28 V, I
D
= 80 A,
V
GS
= 10 V,
R
G
= 0
Ω
V
DD
= 44 V,
V
GS
= 10 V,
I
D
= 160 A
I
F
= 160 A, V
GS
= 0 V
I
F
= 160 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
1.5
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 2 of 6
NP160N055TUJ
Chapter Title
Typical Characteristics (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
dT - Percentage of Rated Power - %
300
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
250
200
150
100
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
T
C
- Case Temperature -
°C
I
D(pulse)
PW
=1
1
0
0
μ
s
I
D
- Drain Current - A
100
I
D(DC)
Power Dissipation Limited
1
1
10
R
DS(on)
Limited
(V
GS
= 10 V)
m
1
1
1
0
m
1
s
s
DC
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
10
1
0.1
0.01
Single pulse
0.001
100
μ
1m
R
th(ch-A)
: 83.3°C/W
R
th(ch-C)
: 0.60°C/W
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 3 of 6
NP160N055TUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
700
600
1000
100
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
500
400
300
200
100
0
0
0.5
1
1.5
2
V
GS
= 10 V
Pulsed
2.5
3
3.5
I
D
- Drain Current - A
10
1
0.1
0.01
0.001
0
T
A
=
−55°C
25°C
85°C
150°C
175°C
V
DS
= 10 V
Pulse
2
4
6
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS(th)
- Gate to Source Threshold Voltage - V
| y
fs
| - Forward Transfer Admittance - S
4.0
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
1000
T
A
=
−55°C
25°C
85°C
150°C
175°C
10
V
DS
= 5 V
Pulsed
1
10
100
1000
3.0
100
2.0
1.0
V
DS
= V
GS
I
D
= 250
μA
-100
0
100
200
0.0
1
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
8
7
6
5
4
3
2
1
0
1
10
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
5
4
3
2
1
0
0
5
10
15
20
25
I
D
= 160 A
80 A
32 A
Pulsed
V
GS
= 10 V
Pulsed
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 4 of 6
NP160N055TUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-100
V
GS
= 10 V
I
D
= 80 A
Pulsed
100000
V
GS
= 0 V
f = 1 MHz
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
C
iss
1000
C
oss
C
rss
100
0.1
1
10
100
-50
0
50
100
150
200
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
10
V
GS
8
6
4
V
DS
I
D
= 160 A
0
20
40
60
80
100
120
2
0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
50
40
30
20
10
0
100
t
d(off)
t
d(on)
t
r
V
DD
= 44 V
28 V
11 V
10
V
DD
= 28 V
V
GS
= 10 V
R
G
= 0
Ω
0.1
1
10
100
t
f
1
1000
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V
GS
= 10 V
10
0V
1
Pulsed
0.1
0
0.5
1
1.5
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
10
0.1
1
10
di/dt =100 A/μs
V
GS
= 0 V
100
1000
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Drain Current - A
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 5 of 6
V
GS
- Gate to Source Voltage - V
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