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RJP60D0DPK-00-T0

Description
Silicon N Channel IGBT High Speed Power Switching
File Size73KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJP60D0DPK-00-T0 Overview

Silicon N Channel IGBT High Speed Power Switching

Preliminary
Datasheet
RJP60D0DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (I
C
= 22 A, V
GE
= 15 V, Ta = 25°C)
Gate to emitter voltage rating
30
V
Pb-free lead plating and chip bonding
R07DS0166EJ0300
Rev.3.00
Jul 13, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
G
1. Gate
2. Collector
3. Emitter
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
P
C Note2
j-c
Note2
Tj
Tstg
Ratings
600
±30
45
22
90
140
0.89
150
–55 to +150
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Page 1 of 6

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