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RJL5014DPK_11

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size79KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJL5014DPK_11 Overview

Silicon N Channel MOS FET High Speed Power Switching

Preliminary
Datasheet
RJL5014DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.32
typ. (at I
D
= 9.5 A, V
GS
= 10 V, Ta = 25
C)
Low leakage current
High speed switching
R07DS0436EJ0200
(Previous: REJ03G1798-0100)
Rev.2.00
Jun 14, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1 %
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
500
30
19
57
19
57
4
0.88
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
Page 1 of 6
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