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RJP30K3DPP-M0

Description
Silicon N Channel IGBT High Speed Power Switching
File Size89KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJP30K3DPP-M0 Overview

Silicon N Channel IGBT High Speed Power Switching

Preliminary
Datasheet
RJP30K3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage V
CE(sat)
= 1.1V typ
High speed switching tr = 90 ns typ, tf = 250 ns typ
Low leak current I
CES
= 1
A
max
Isolated package TO-220FL
R07DS0501EJ0100
Rev.1.00
Jul 05, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
P
C Note2
j-c
Tj
Tstg
Ratings
360
±30
40
300
30
4.17
150
–55 to +150
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0501EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 6
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