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RJQ6021DPM

Description
IGBT
CategoryDiscrete semiconductor    The transistor   
File Size71KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJQ6021DPM Overview

IGBT

Preliminary Datasheet
RJQ6021DPM
600V - 10A - IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Built in fast recovery diode in one package
R07DS0650EJ0100
Rev.1.00
Jan 23, 2012
Outline
RENESAS Package code: PRSS0005ZB-A)
(Package name: TO-3PFM)
2
1, 3
1. Anode
2. Cathode
3. Anode, Collector
4. Emitter
5. Gate
5
12
34
5
4
Absolute Maximum Ratings
IGBT
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Junction temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
I
C(peak)
Tj
Tstg
Note1
(Ta = 25°C)
Ratings
600
±30
20
10
40
150
–55 to +150
Unit
V
V
A
A
A
°C
°C
Diode
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Symbol
V
RM
I
F
I
FSM
Tj
Tstg
Ratings
600
10
20
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C
°C
R07DS0650EJ0100 Rev.1.00
Jan 23, 2012
Page 1 of 3

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