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TBB1012_11

Description
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size155KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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TBB1012_11 Overview

Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Preliminary
Datasheet
TBB1012
Twin Built in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
Features
R07DS0317EJ0300
(Previous: REJ03G1245-0200)
Rev.3.00
Mar 28, 2011
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Very useful for total tuner cost reduction.
Suitable for World Standard Tuner RF amplifier.
High gain
Low noise
Low output capacitance
Power supply voltage: 5 V
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
6
5
4
2
1
3
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Notes:
1. Marking is “MM“.
2. TBB1012 is individual type number of Renesas TWIN BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Note3
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
250
150
–55 to +150
Unit
V
V
V
mA
mW
°
C
°
C
Notes: 3. Value on the glass epoxy board (50mm
×
40mm
×
1mm).
R07DS0317EJ0300 Rev.3.00
Mar 28, 2011
Page 1 of 13

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