Preliminary
Datasheet
BB504M
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
Features
•
•
•
•
R07DS0286EJ0800
(Previous: REJ03G0837-0700)
Rev.8.00
Mar 28, 2011
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
•
Provide mini mold packages; MPAK-4 (SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “DS–”.
2. BB504M is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 1 of 9
BB504M
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
Noise figure (1)
Power gain (2)
Noise figure (2)
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
|y
fs
|
c
iss
c
oss
c
rss
PG
NF
PG
NF
Min
6
+6
+6
—
—
0.6
0.6
13
24
1.7
1.0
—
25
—
17
—
Typ
—
—
—
—
—
0.85
0.85
16
29
2.1
1.4
0.027
30
1.0
22
1.75
Max
—
—
—
+100
+100
1.1
1.1
19
34
2.5
1.8
0.05
—
1.8
—
2.3
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
Test conditions
I
D
= 200
μA,
V
G1S
= V
G2S
= 0
I
G1
= +10
μA,
V
G2S
= V
DS
= 0
I
G2
= +10
μA,
V
G1S
= V
DS
= 0
V
G1S
= +5 V, V
G2S
= V
DS
= 0
V
G2S
= +5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G2S
= 4 V
I
D
= 100
μA
V
DS
= 5 V, V
G1S
= 5 V
I
D
= 100
μA
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 120 kΩ
V
DS
= 5 V, V
G1
= 5 V, V
G2S
= 4 V
R
G
= 120 kΩ, f = 1 kHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 120 kΩ
f = 1 MHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 120 kΩ
f = 200 MHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 120 kΩ
f = 900 MHz
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 2 of 9
BB504M
Preliminary
Test Circuits
•
DC Biasing Circuit for Operating Characteristics Items
(I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Gate 1
R
G
V
G1
A
I
D
Drain
Source
•
200 MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input(50Ω)
L1
1000p
36p
1000p
47k
BBFET
L2
1000p
47k
Output(50Ω)
10p max
1000p
1SV70
R
G
120k
RFC
1SV70
1000p
V
D
= V
G1
Unit Resistance (Ω)
Capacitance (F)
L1 :
Φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
Φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
Φ1mm
Enameled Copper Wire,Inside dia 5mm, 2Turns
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 3 of 9
BB504M
•
900 MHz Power Gain, Noise Figure Test Circuit
V
G1
V
G2
C4
C5
V
D
C6
Preliminary
R1
R2
C3
G2
R3
D
L3
RFC
Output
L4
Input
L1
L2
G1
S
C1
C2
C1, C2
C3
C4 to C6
R1
R2
R3
:
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
120 kΩ
47 kΩ
4.7 kΩ
L1:
10
10
L2:
26
3
3
(Φ1mm Copper wire)
Unit:mm
8
21
L4:
29
10
7
7
10
L3:
18
RFC :
Φ1mm
Copper wire with enamel 4turns inside dia 6mm
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 4 of 9
BB504M
Maximum Channel Power
Dissipation Curve
Preliminary
Typical Output Characteristics
20
82
k
0k
Ω
0
120
k
Ω
k
Ω
Ω
Channel Power Dissipation Pch (mW)
200
R
12
8
50
4
0
50
100
150
200
0
1
2
3
4
15
100
10
150
Drain Current I
D
(mA)
G
16
=6
V
G2S
= 4 V
V
G1
= V
DS
8k
Ω
k
Ω
0
18
Ω
0k
22
5
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
20
V
DS
= 5 V
R
G
= 120 k
Ω
4V
30
V
DS
= 5 V
R
G
= 120 k
Ω
24 f = 1 kHz
18
2V
4V
3V
Drain Current I
D
(mA)
16
12
3V
2V
8
12
4
V
G2S
= 1 V
6
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Power Gain vs. Gate Resistance
40
4
Noise Figure vs. Gate Resistance
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 200MHz
Power Gain PG (dB)
Noise Figure NF (dB)
100 200
500 1000
35
30
25
20
15
10
10
3
2
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 200 MHz
20
50
1
0
10
20
50
100 200
500 1000
Gate Resistance R
G
(kΩ)
Gate Resistance R
G
(kΩ)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 5 of 9
Test/Measurement
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