Preliminary
Data Sheet
NP110N055PUK
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0591EJ0100
Rev.1.00
Dec 12, 2011
The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
R
DS(on)
= 1.75 m MAX. (V
GS
= 10 V, I
D
= 55 A)
Low C
iss
: C
iss
= 10700 pF TYP. (V
DS
= 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP110N055PUK-E1-AY
*1
1
NP110N055PUK-E2-AY
*
Note:
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Package
TO-263 (MP-25ZP)
*1
Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings
(T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
*
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
*
2
Repetitive Avalanche Energy
*
2
Notes:
*1
T
C
= 25°C, P
W
10 s, Duty Cycle
*2
R
G
= 25 , V
GS
= 20
0V
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
1%
Ratings
55
20
110
440
348
1.8
175
–55 to 175
66
435
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.43
83.3
°C/W
°C/W
R07DS0591EJ0100 Rev.1.00
Dec 12, 2011
Page 1 of 6
NP110N055PUK
Electrical Characteristics
(T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
*
1
Drain to Source On-state Resistance
*
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
*
1
Reverse Recovery Time
Reverse Recovery Charge
Note:
*1
Pulsed test
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
—
—
2.0
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TYP.
—
—
3.0
120
1.45
10700
1200
380
38
19
140
14
196
51
45
0.9
83
145
MAX.
1
100
4.0
—
1.75
16050
1800
690
90
50
280
40
294
—
—
1.5
—
—
Unit
A
nA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 55 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 5 V, I
D
= 55 A
V
GS
= 10 V, I
D
= 55 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 55 A
V
GS
= 10 V
R
G
= 0
V
DD
= 44 V
V
GS
= 10 V
I
D
= 110 A
I
F
= 110 A, V
GS
= 0 V
I
F
= 110 A, V
GS
= 0 V
di/dt = 100 A/ s
R07DS0591EJ0100 Rev.1.00
Dec 12, 2011
Page 2 of 6
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