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RJK0226DNS

Description
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
File Size161KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK0226DNS Overview

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Preliminary
Datasheet
RJK0226DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.3 m
typ. (at V
GS
= 8 V)
Pb-free
Halogen-free
Outline
Package name: 8pin HVSON(3333)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
25
±12
40
160
40
14.7
27
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
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