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CPR4F-020

Description
3 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CPR4F-020 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE

CPR4F-020 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionE-XALF-W2
Contacts2
Manufacturer packaging codeCASE GPR-4AM
Reach Compliance Code_compli
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CPR4F-010
CPR4F-020
CPR4F-040
CPR4F-060
Central
TM
Semiconductor Corp.
GLASS PASSIVATED
FAST RECOVERY RECTIFIER
3A, 100 THRU 600 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CPR4F-010 thru
CPR4F-060 are silicon rectifiers manufactured in a
hermetically sealed, glass passivated package
designed for use in all types of commercial,
industrial, entertainment and automotive applications
where fast switching speeds are required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current, TA=50°C
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
Thermal Resistance
VRRM
VR
VR(RMS)
IO
IFSM
TJ, Tstg
Θ
JA
CPR4F
-010
100
100
70
-020
200
200
140
3.0
100
-65 to +175
55
-040
400
400
280
-060
600
600
420
UNITS
V
V
V
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted))
SYMBOL
TEST CONDITIONS
TYP
IR
IR
VF
CJ
trr
VR=Rated VRRM
VR=Rated VRRM, TA=100°C
IF=3.0A
VR=4.0V, f=1.0MHz
IF=0.5A, IR=1.0A, Irr=0.25A
50
MAX
5.0
100
1.3
250
UNITS
μA
μA
V
pF
ns
R0 (30-April 2008)

CPR4F-020 Related Products

CPR4F-020 CPR4F-010_15 CPR4F-040 2SC3170_2014
Description 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE Silicon NPN Power Transistors

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