CPR4F-040 datasheet, PDF - EEWORLD Datasheet

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CPR4F-040: Description3 A, 400 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size69KB，2 Pages; ManufacturerCentral Semiconductor

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CPR4F-040 Overview

3 A, 400 V, SILICON, RECTIFIER DIODE

CPR4F-040 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	HERMETIC SEALED, CASE GPR-4AM, 2 PIN
Contacts	2
Manufacturer packaging code	CASE GPR-4AM
Reach Compliance Code	_compli
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-XALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	UNSPECIFIED
Package shape	ELLIPTICAL
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.25 µs
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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CPR4F-010

CPR4F-020

CPR4F-040

CPR4F-060

Central

Semiconductor Corp.

GLASS PASSIVATED

FAST RECOVERY RECTIFIER

3A, 100 THRU 600 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CPR4F-010 thru

CPR4F-060 are silicon rectifiers manufactured in a

hermetically sealed, glass passivated package

designed for use in all types of commercial,

industrial, entertainment and automotive applications

where fast switching speeds are required.

MARKING: FULL PART NUMBER

GPR-4AM CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current, TA=50°C

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

Thermal Resistance

VRRM

VR(RMS)

IFSM

TJ, Tstg

CPR4F

-010

100

-020

200

140

3.0

100

-65 to +175

-040

400

280

-060

600

420

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted))

SYMBOL

TEST CONDITIONS

TYP

trr

VR=Rated VRRM

VR=Rated VRRM, TA=100°C

IF=3.0A

VR=4.0V, f=1.0MHz

IF=0.5A, IR=1.0A, Irr=0.25A

MAX

5.0

100

1.3

250

UNITS

μA

R0 (30-April 2008)

CPR4F-040 Related Products

	CPR4F-040	CPR4F-010_15	CPR4F-020	2SC3170_2014
Description	3 A, 400 V, SILICON, RECTIFIER DIODE	3 A, 200 V, SILICON, RECTIFIER DIODE	3 A, 200 V, SILICON, RECTIFIER DIODE	Silicon NPN Power Transistors

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