D40K1 datasheet, PDF - EEWORLD Datasheet

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D40K1: DescriptionRF POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size416KB，2 Pages; ManufacturerCentral Semiconductor

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D40K1 Overview

RF POWER TRANSISTOR

D40K1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	1.67 W
Maximum power dissipation(Abs)	10 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	75 MHz
VCEsat-Max	1.5 V

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D40K SERIES

NPN SILICON

DARLINGTON POWER

TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D40K series types

are NPN silicon Darlington power transistors designed

for general purpose amplifier applications where high

gain is required.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

ICM

TJ, Tstg

D40K1, 3

2.0

3.0

0.2

1.67

-65 to +150

12.5

D40K2, 4

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=Rated VCES

IEBO

VEB=13V

BVCEO

lC=10mA (D40K1, 3)

BVCEO

VCE(SAT)

VBE(SAT)

hFE

Ccb

lC=10mA (D40K2, 4)

lC=1.5A,

lC=1.0A,

lC=1.5A,

lC=1.0A,

IB=3.0mA (D40K1, 2)

IB=2.0mA (D40K3, 4)

IB=3.0mA (D40K1, 2)

IB=2.0mA (D40K3, 4)

10K

MAX

500

100

UNITS

1.5

2.5

VCE=5.0V, IC=200mA

VCE=5.0V, IC=1.5A (D40K1, 2)

VCE=5.0V, IC=1.0A (D40K3, 4)

VCE=5.0V, lC=20mA

VCB=10V, f=1.0MHz

MHz

R1 (23-January 2012)

D40K1 Related Products

	D40K1	D40K3	D40K4	D40K
Description	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	_compli	_compli	not_compliant	unknow
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
JEDEC-95 code	TO-202	TO-202	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	incompatible	-
Parts packaging code	SFM	SFM	SFM	-
Contacts	3	3	3	-
ECCN code	EAR99	EAR99	EAR99	-
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	-
Maximum collector current (IC)	2 A	2 A	2 A	-
Collector-based maximum capacity	10 pF	10 pF	10 pF	-
Collector-emitter maximum voltage	30 V	30 V	50 V	-
Minimum DC current gain (hFE)	1000	1000	1000	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power consumption environment	1.67 W	1.67 W	1.67 W	-
Maximum power dissipation(Abs)	10 W	10 W	10 W	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-
Nominal transition frequency (fT)	75 MHz	75 MHz	75 MHz	-
VCEsat-Max	1.5 V	1.5 V	1.5 V	-

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