D40K datasheet, PDF - EEWORLD Datasheet

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D40K: DescriptionRF POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size416KB，2 Pages; ManufacturerCentral Semiconductor

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D40K Overview

RF POWER TRANSISTOR

D40K Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
Configuration	DARLINGTON
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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D40K SERIES

NPN SILICON

DARLINGTON POWER

TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D40K series types

are NPN silicon Darlington power transistors designed

for general purpose amplifier applications where high

gain is required.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

ICM

TJ, Tstg

D40K1, 3

2.0

3.0

0.2

1.67

-65 to +150

12.5

D40K2, 4

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=Rated VCES

IEBO

VEB=13V

BVCEO

lC=10mA (D40K1, 3)

BVCEO

VCE(SAT)

VBE(SAT)

hFE

Ccb

lC=10mA (D40K2, 4)

lC=1.5A,

lC=1.0A,

lC=1.5A,

lC=1.0A,

IB=3.0mA (D40K1, 2)

IB=2.0mA (D40K3, 4)

IB=3.0mA (D40K1, 2)

IB=2.0mA (D40K3, 4)

10K

MAX

500

100

UNITS

1.5

2.5

VCE=5.0V, IC=200mA

VCE=5.0V, IC=1.5A (D40K1, 2)

VCE=5.0V, IC=1.0A (D40K3, 4)

VCE=5.0V, lC=20mA

VCB=10V, f=1.0MHz

MHz

R1 (23-January 2012)

D40K Related Products

	D40K	D40K1	D40K3	D40K4
Description	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	_compli	_compli	not_compliant
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
JEDEC-95 code	TO-202	TO-202	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible
Parts packaging code	-	SFM	SFM	SFM
Contacts	-	3	3	3
ECCN code	-	EAR99	EAR99	EAR99
Shell connection	-	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	-	2 A	2 A	2 A
Collector-based maximum capacity	-	10 pF	10 pF	10 pF
Collector-emitter maximum voltage	-	30 V	30 V	50 V
Minimum DC current gain (hFE)	-	1000	1000	1000
Maximum operating temperature	-	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power consumption environment	-	1.67 W	1.67 W	1.67 W
Maximum power dissipation(Abs)	-	10 W	10 W	10 W
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	AMPLIFIER
Nominal transition frequency (fT)	-	75 MHz	75 MHz	75 MHz
VCEsat-Max	-	1.5 V	1.5 V	1.5 V

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