MJE15030 datasheet, PDF - EEWORLD Datasheet

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MJE15030: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size144KB，2 Pages; ManufacturerCentral Semiconductor

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MJE15030 Overview

POWER TRANSISTOR

MJE15030 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	50 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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MJE15028 MJE15030

MJE15029 MJE15031

NPN

PNP

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE15028/MJE15029

Series types are Complementary Silicon Power Transistors

designed for use in audio amplifier applications.

COMPLEMENTARY SILICON

POWER TRANSISTORS

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TC=25°C)

SYMBOL

TEST CONDITIONS

ICBO

VCB=Rated VCBO

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

VCE=Rated VCEO

VEB=5.0V

IC=10mA (MJE15028, MJE15029)

IC=10mA (MJE15030, MJE15031)

IC=1.0A, IB=100mA

VCE=2.0V, IC=1.0A

VCE=2.0V, IC=100mA

VCE=2.0V, IC=2.0A

VCE=2.0V, IC=3.0A

VCE=2.0V, IC=4.0A

VCE=10V, IC=500mA, f=10MHz

MHz

120

150

0.5

1.0

VCEO

VEBO

ICM

TJ, Tstg

MJE15028

MJE15029

120

5.0

8.0

2.0

-65 to +150

62.5

2.5

MJE15030

MJE15031

150

UNITS

°C

°C/W

MIN

MAX

100

UNITS

μA

R0 (17-February 2009)

MJE15030 Related Products

	MJE15030	MJE15028	MJE15029	MJE15031
Description	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN
Contacts	3	3	3	3
Reach Compliance Code	_compli	unknow	unknow	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	150 V	120 V	120 V	150 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	PNP	PNP
Maximum power dissipation(Abs)	50 W	50 W	50 W	50 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	-

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