-100mA/-50V Digital transistors(with built-in resistors)
DTA043TM / DTA043TEB / DTA043TUB
Features
1) Built-in input resistor enables the direct control of base terminal
by input voltage without external resistor.
(See Inner circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 39
EMT3F
(3)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
(1)
(2)
Abbreviated symbol : 39
UMT3F
2.0
0.32
0.9
0.53
0.425
(3)
Applications
Inverter, Interface, Driver
1.25
2.1
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 39
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTA043ＴM
DTA043ＴEB
DTA043ＴUB
Inner
circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
-
-
○
R
1
B
B : Base
C : Collector
E : Emitter
C
0.53
0.425
E
R
1
=4.7kΩ
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
* Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C(max)
P
D
T½
Tstg
M
Limits(DTA043T□)
EB
UB
-50
-50
-5
-100
150
150
-55 to +150
200
Unit
V
V
mA
mA
mW *
C
C
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©2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.A
DTA043TM / DTA043TEB / DTA043TUB
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter saturation voltage
DC current gain
Transition frequency *
Input resistance
* Characteristics of built-in transistor
Typ.
-
-
-
-
-
-0.07
-
250
4.7
Max.
-
-
-
-500
-500
-0.15
600
-
6.11
Unit
V
V
V
nA
nA
V
-
MHz
kΩ
Test Conditions
I
C
=-50uA
I
C
=-1mA
I
E
=-50uA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA / I
B
=-0.5mA
V
CE
=-10V / I
C
=-0.5mA
V
CE
=-10V / I
C
=-5mA
f=100MHz
Data Sheet
Min.
-50
-50
-5
-
-
-
100
-
3.29
BV
CBO
BV
CEO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Electrical
characteristics curves
1000
COLLECTOR SATURATION VOLTAGE :
V
CE(sat)
(V)
V
CE
=-10.0V
DC CURRENT GAIN : h
FE
-1
I
C
/I
B
=10
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-40℃
-0.1
10
-0.01
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-40℃
1
-0.1
-1
-10
-100
-0.001
-0.1
-1
-10
-100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRNET : I
C
(mA)
Fig.1 DC Current Gain vs. Collector Current
Fig.2 Collector Saturation Voltage vs. Collector Current
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©2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.09 - Rev.A
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