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DTA044EM

Description
100mA/-50V Digital transistors(with built-in resistors)
File Size354KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTA044EM Overview

100mA/-50V Digital transistors(with built-in resistors)

-100mA/-50V Digital transistors(with built-in resistors)
DTA044EM / DTA044EEB / DTA044EUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 31
EMT3F
(3)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
(1)
(2)
Abbreviated symbol : 31
UMT3F
0.32
2.0
0.9
0.53
0.425
(3)
Applications
Inverter, Interface, Driver
1.25
2.1
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 31
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTA044EM
DTA044EEB
DTA044EUB
Equivalent
circuit
VMT3
Taping
T2L
8000
-
-
EMT3F
Taping
TL
3000
-
-
UMT3F
Taping
TL
3000
-
-
IN
R
1
IN
R
2
GND(+)
OUT
OUT
GND(+)
R
1
=R
2
=47kΩ
Absolute
maximum
(Ta=25C)
Parameter
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
Symbol
V
CC
V
IN
I
C(max)
I
O
P
D
Tstg
M
Limits(DTA044E□)
EB
UB
-50
-40
10
-100
-30
150
150
-55 to +150
200
0.53
0.425
Unit
V
V
V
mA
mA
mW
C
C
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A

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DTA044EM DTA044EEB DTA044EUB
Description 100mA/-50V Digital transistors(with built-in resistors) 100mA/-50V Digital transistors(with built-in resistors) 100mA/-50V Digital transistors(with built-in resistors)
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