100mA/50V Digital transistors(with built-in resistors)
DTC014EM / DTC014EEB / DTC014EUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 40
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
UMT3F
(1)
(2)
Abbreviated symbol : 40
1.25
2.1
Applications
Inverter, Interface, Driver
0.32
2.0
0.9
0.53
0.425
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 40
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC014EM
DTC014EEB
DTC014EUB
Equivalent
circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
-
-
○
IN
R
1
IN
R
2
GND
OUT
OUT
GND
R
1
=R
2
=10kΩ
Absolute
maximum
(Ta=25C)
Parameter
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
Symbol
V
CC
V
IN
I
C(max)
I
O
P
D
Tj
Tstg
M
Limits(DTC014E□)
EB
UB
50
40
-10
100
50
150
150
-55 to +150
200
Unit
V
V
V
mA
mA
mW
℃
℃
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
0.53
0.425
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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