100mA/50V Digital transistors(with built-in resistors)
DTC043TM / DTC043TEB / DTC043TUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 49
EMT3F
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(3)
(1)
(2)
Abbreviated symbol : 49
0.425
(3)
1.25
2.1
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 49
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC043ＴM
DTC043ＴEB
DTC043ＴUB
Equivalent circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
-
-
○
C
R
1
B
B : Base
C : Collector
E : Emitter
R
1
=4.7k
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation *
Junction temperature
Range of storage temperature
* Each terminal mounted on a reference land
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Tstg
M
Limits(DTC043T□)
EB
UB
50
50
5
100
150
150
-55 to +150
200
Unit
V
V
V
mA
mW
C
C
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©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
0.53
0.425
0.53
Applications
Inverter, Interface, Driver
UMT3F
0.32
2.0
0.9
E
DTC043TM / DTC043TEB / DTC043TUB
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter saturation voltage
DC current gain
Transition frequency *
Input resistance
* Characteristics of built-in transistor
Typ.
-
-
-
-
-
0.05
-
250
4.7
Max.
-
-
-
500
500
0.15
600
-
6.11
Unit
V
V
V
nA
nA
V
-
MHz
k
Test Conditions
I
C
=50A
I
C
=1mA
I
E
=50A
V
CB
=50V
V
EB
=4V
I
C
=5mA / I
B
=0.5mA
V
CE
=10V / I
C
=5mA
V
CE
=10V / I
E
=-5mA
f=100MHz
Data Sheet
Min.
50
50
5
-
-
-
100
-
3.29
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Electrical
characteristics curves
V
CE
=10V
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE :
V
CE(sat)
(V)
1000
1
I
C
/I
B
=10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.1
10
0.01
1
0.1
1
10
100
0.001
0.1
1
10
100
COLLECTOR CURRENT : I
C
(mA)
Fig.1 DC Current Gain vs. Collector Current
COLLECTOR CURRNET : I
C
(mA)
Fig.2 Collector Saturation Voltage vs. Collector Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
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