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MBR20100CT-M3/4W

Description
10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size123KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MBR20100CT-M3/4W Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR20100CT-M3/4W Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Samacsys DescriptiVISHAY - MBR20100CT-M3/4W - SCHOTTKY RECTIFIER, 20A, 100V, TO-220AB
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.65 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MBR2090CT-M3, MBR20100CT-M3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
®
TO-220AB
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
1
PIN 1
PIN 3
PIN 2
CASE
3
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variation
2 x 10 A
90 V, 100 V
150 A
0.65 V
150 °C
TO-220AB
Common cathode
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Working peak reverse voltage
Max. DC blocking voltage
Max. average forward rectified current at T
C
= 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
MBR2090CT
90
90
90
20
10
150
10 000
-65 to +150
MBR20100CT
100
100
100
UNIT
V
V
V
A
A
V/μs
°C
Revision: 11-May-16
Document Number: 89192
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
application EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE
Diode component materials SILICON silicon
Diode type RECTIFIER DIODE rectifier diode
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum repetitive peak reverse voltage 100 V 100 V
Terminal form THROUGH-HOLE THROUGH-hole
Terminal location SINGLE single
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