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DTC144EM

Description
PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70
CategoryDiscrete semiconductor    The transistor   
File Size214KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

DTC144EM Overview

PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70

DTC144EM Parametric

Parameter NameAttribute value
MakerSECOS
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompli
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC144EE / DTC144EUA
DTC144ECA / DTC144ESA / DTC144EM
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTC144EE (SOT-523)
DTC144EUA (SOT-323)
Addreviated symbol:26
DTC144EM (SOT-723)
Addreviated symbol:26
DTC144ECA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol:26
DTA144ESA (TO-92S)
Addreviated symbol:26
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Input voltage
Output current
Power dissipation
Junction & Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
, T
STG
Limits (DTC144E□)
M
E
UA
50
-10~40
30
100
100
150
200
150, -55~150
300
CA
SA
Unit
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2011 Rev. B
Page 1 of 3

DTC144EM Related Products

DTC144EM DTC144ECA DTC144EE DTC144ESA DTC144EUA
Description PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70 PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70 PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70 PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70 PRE-BIASED ""DIGITAL"" TRANSISTOR,50V V(BR)CEO,30MA I(C),SC-70
Maker SECOS SECOS SECOS SECOS SECOS
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 68 68 68 68 68
JESD-30 code R-PDSO-F3 R-PDSO-G3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN
surface mount YES YES YES NO YES
Terminal form FLAT GULL WING GULL WING THROUGH-HOLE GULL WING
Terminal location DUAL DUAL DUAL BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches - 1 1 - 1
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