EEWORLDEEWORLDEEWORLD

Part Number

Search

KBP302G

Description
3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size730KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Compare View All

KBP302G Online Shopping

Suppliers Part Number Price MOQ In stock  
KBP302G - - View Buy Now

KBP302G Overview

3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

KBP3005G ~ KBP310G
Elektronische Bauelemente
Voltage 50V ~ 1000V
3.0Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Surge overload rating -60amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory
flammability classification 94V-0
Mounting position: Any
G
A
KBP
BE
DK
K J
F
C
L
H
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
14.22
15.24
10.67
11.68
4.57
5.08
16.25
-
11.68
12.70
0.76
0.86
REF.
G
H
J
K
L
Millimeter
Min.
Max.
3.0 x 45°
1.15
1.35
12.7
-
-
1.52
3.60
4.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
=50°C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Super Imposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage Drop
Per Bridge Element at 3.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage per Element @T
A
=25℃
Maximum Reverse Current at Rated
DC Blocking Voltage per Element @T
A
=100℃
Typical Thermal Resistance
1
Typical Thermal Resistance
2
Power dissipation
Operating and Storage temperature range
Notes:
1. Thermal Resistance Junction to Ambient.
2. Thermal Resistance Junction to case.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
KBP
3005G
KBP
301G
KBP
302G
KBP
304G
KBP
306G
KBP
308G
KBP
310G
Unit
V
V
V
A
A
V
µA
mA
°C/W
°C/W
W
°C
50
35
50
100
70
100
200
140
200
400
280
400
3.0
60
1.1
10
600
420
600
800
560
800
1000
700
1000
I
R
1
R
θJA
R
θJC
P
D
T
J
, T
STG
40
10
3
-55~150
13-May-2011 Rev. A
Page 1 of 2

KBP302G Related Products

KBP302G KBP3005G KBP301G KBP304G KBP306G KBP308G KBP310G
Description 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1.9 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.9 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 135  1757  1810  891  268  3  36  37  18  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号