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KBP310G

Description
1.9 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size730KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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KBP310G Overview

1.9 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

KBP3005G ~ KBP310G
Elektronische Bauelemente
Voltage 50V ~ 1000V
3.0Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Surge overload rating -60amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory
flammability classification 94V-0
Mounting position: Any
G
A
KBP
BE
DK
K J
F
C
L
H
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
14.22
15.24
10.67
11.68
4.57
5.08
16.25
-
11.68
12.70
0.76
0.86
REF.
G
H
J
K
L
Millimeter
Min.
Max.
3.0 x 45°
1.15
1.35
12.7
-
-
1.52
3.60
4.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
=50°C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Super Imposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage Drop
Per Bridge Element at 3.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage per Element @T
A
=25℃
Maximum Reverse Current at Rated
DC Blocking Voltage per Element @T
A
=100℃
Typical Thermal Resistance
1
Typical Thermal Resistance
2
Power dissipation
Operating and Storage temperature range
Notes:
1. Thermal Resistance Junction to Ambient.
2. Thermal Resistance Junction to case.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
KBP
3005G
KBP
301G
KBP
302G
KBP
304G
KBP
306G
KBP
308G
KBP
310G
Unit
V
V
V
A
A
V
µA
mA
°C/W
°C/W
W
°C
50
35
50
100
70
100
200
140
200
400
280
400
3.0
60
1.1
10
600
420
600
800
560
800
1000
700
1000
I
R
1
R
θJA
R
θJC
P
D
T
J
, T
STG
40
10
3
-55~150
13-May-2011 Rev. A
Page 1 of 2

KBP310G Related Products

KBP310G KBP3005G KBP301G KBP302G KBP304G KBP306G KBP308G
Description 1.9 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1.9 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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