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SSG4520H_12

Description
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
File Size439KB,6 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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SSG4520H_12 Overview

N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET

SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on)
and to ensure minimal power loss and heat
dissipation.
SOP-8
B
L
D
M
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
High performance trench technology
A
C
N
J
K
H
G
Millimeter
Min.
Max.
5.8
6.20
4.80
5.00
3.80
4.00
0.50
0.93
0.19
0.25
1.27 TYP.
F
E
REF.
A
B
C
D
E
F
G
REF.
H
J
K
L
M
N
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
Millimeter
Min.
Max.
0.35
0.51
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
Top View
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
N-CH
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
20
±8
6.6
5
20
2.2
Rating
P-CH
-20
±8
-5.2
-3.8
-20
-2.2
2.1
1.3
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
Operating Junction & Storage Temperature Range
Thermal Resistance Ratings
Maximum Junction-to-Ambient
1
t≦10 sec
Steady State
R
θJA
62.5
110
°C / W
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 1 of 6

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Description N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET N & P-Ch Enhancement Mode Power MOSFET
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