SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on)
and to ensure minimal power loss and heat
dissipation.
SOP-8
B
L
D
M
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
High performance trench technology
A
C
N
J
K
H
G
Millimeter
Min.
Max.
5.8
6.20
4.80
5.00
3.80
4.00
0°
8°
0.50
0.93
0.19
0.25
1.27 TYP.
F
E
REF.
A
B
C
D
E
F
G
REF.
H
J
K
L
M
N
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
Millimeter
Min.
Max.
0.35
0.51
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
Top View
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
N-CH
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
20
±8
6.6
5
20
2.2
Rating
P-CH
-20
±8
-5.2
-3.8
-20
-2.2
2.1
1.3
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
Operating Junction & Storage Temperature Range
Thermal Resistance Ratings
Maximum Junction-to-Ambient
1
t≦10 sec
Steady State
R
θJA
62.5
110
°C / W
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 1 of 6
SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol Ch
N
P
N
P
N
P
N
P
N
Drain-Source On-Resistance
1
R
DS(ON)
P
Diode Forward Voltage
Forward Transconductance
1
V
SD
g
fs
N
P
N
P
-
-
Min.
1
-1
-
-
-
-
10
-10
-
-
-
-
Typ.
Static
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-0.73
10
10
Max.
-
-
±100
±100
1
-1
-
-
47
55
79
110
Unit
Teat Conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS
, I
D
= -250μA
V
DS
=0, V
GS
=8V
V
DS
=0, V
GS
= -8V
V
DS
=8V, V
GS
=0
V
DS
= -8V, V
GS
=0
V
DS
=5V, V
GS
=4.5V
V
DS
= -5V, V
GS
= -4.5V
V
GS
=4.5V, I
D
=5.3A
V
GS
=2.5V, I
D
=5A
V
GS
= -4.5V, I
D
= -4.2A
V
GS
= -2.5V, I
D
= -3.8A
V
GS
=0, I
S
=1.1A
V
GS
=0, I
S
= -1.1A
V
DS
=10V, I
D
=5.3A
V
DS
= -10V, I
D
= -4.2A
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
nA
μA
A
mΩ
V
-
-
S
Dynamic
2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
-
-
-
-
-
-
-
-
-
-
-
-
-
-
439
683
78
90
68
75
6
11
0.9
2.8
2.1
2.7
7
10
24
20
35
49
19
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nS
N-Channel
V
DD
=10V, V
GEN
=4.5V
I
D
=5.3A, R
GEN
=6Ω, R
L
=1.8Ω
P-Channel
V
DD
= -10V, V
GEN
= -4.5V
I
D
= -4.2A, R
GEN
=6Ω, R
L
=2.3Ω
nC
P-Channel
I
D
= -4.2A, V
DS
= -10V, V
GS
= -4.5V
N-Channel
I
D
=5.3A, V
DS
=10V, V
GS
=4.5V
pF
P-Channel
V
DS
= -15V, V
GS
=0, f=1MHz
N-Channel
V
DS
=15V, V
GS
=0, f=1MHz
Notes:
1. Pulse test：PW
≦
300μs duty cycle
≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 2 of 6
SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 3 of 6
SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 4 of 6
SSG4520H
Elektronische Bauelemente
N-Ch: 6.6A, 20V, R
DS(ON)
47 m
P-Ch: -5.2A, -20V, R
DS(ON)
79 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 5 of 6
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