VS-30BQ100-M3
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Small foot print, surface mountable
• High frequency operation
SMC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMC
3.0 A
100 V
0.62 V
5 mA at 125 °C
175 °C
Single die
3.0 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
The VS-30BQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3.0 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
100
800
0.62
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30BQ100-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 148 °C, rectangular waveform
50 % duty cycle at T
L
= 138 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
3.0
4.0
800
70
3.0
0.5
mJ
A
A
UNITS
Document Number: 93360
Revision: 13-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-30BQ100-M3
Vishay Semiconductors
Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
I
RM
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.79
0.90
0.62
0.70
0.5
5.0
115
3.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
(2)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
DC operation
R
thJA
TEST CONDITIONS
VALUES
- 55 to 175
12
UNITS
°C
°C/W
46
0.24
0.008
g
oz.
3J
Case style SMC (similar to DO-214AB)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93360
Revision: 13-Sep-10
VS-30BQ100-M3
Schottky Rectifier, 3 A
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
10
10
I
R
- Reverse Current (mA)
T
J
= 175 °C
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
0.00001
T
J
= 50 °C
T
J
= 25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
20
40
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
100
10
P
DM
t
1
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
100
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 93360
Revision: 13-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-30BQ100-M3
Vishay Semiconductors
180
Schottky Rectifier, 3 A
Allowable Lead Temperature (°C)
2.5
Average Power Loss (W)
2.0
160
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
1.5
140
1.0
DC
120
Square wave (D = 0.50)
80% rated V
r
applied
See note (1)
0.5
100
0
1
2
3
4
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
4.0
4.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93360
Revision: 13-Sep-10
VS-30BQ100-M3
Schottky Rectifier, 3 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
30
2
B
3
Q
4
100
5
-M3
6
Vishay Semiconductors product suffix
Current rating
B = SMC
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30BQ100-M3/9AT
PREFERRED PACKAGE CODE
9AT
MINIMUM ORDER QUANTITY
3500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95402
www.vishay.com/doc?95403
www.vishay.com/doc?95404
Document Number: 93360
Revision: 13-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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