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31DQ09G_12

Description
3.3 A, 90 V, SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size114KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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31DQ09G_12 Overview

3.3 A, 90 V, SILICON, RECTIFIER DIODE, DO-41

VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation forenhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long termreliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3.3 A
90 V, 100 V
See Electrical table
3.0 mA at 125 °C
150 °C
Single die
3.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ..G... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.3
90/100
370
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
90
90
100
100
V
VS-31DQ09G
VS-31DQ09G-M3
VS-31DQ10G
VS-31DQ10G-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current, T
J
= 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 53.4 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.3
370
60
3.0
0.5
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1 A, 18 μs square pulse
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 19-Sep-11
Document Number: 93322
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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