VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation forenhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long termreliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3.3 A
90 V, 100 V
See Electrical table
3.0 mA at 125 °C
150 °C
Single die
3.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ..G... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.3
90/100
370
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
90
90
100
100
V
VS-31DQ09G
VS-31DQ09G-M3
VS-31DQ10G
VS-31DQ10G-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current, T
J
= 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 53.4 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.3
370
60
3.0
0.5
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1 A, 18 μs square pulse
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 19-Sep-11
Document Number: 93322
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.85
0.97
0.69
0.80
0.1
3
110
9.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
80
°C/W
34
1.2
0.042
Case style C-16
31DQ09G
31DQ10G
g
oz.
UNITS
°C
Marking device
Revision: 19-Sep-11
Document Number: 93322
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
Allowable Lead Temperature (°C)
150
I
F
- Instantaneous Forward Current (A)
10
120
DC
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
90
60
Square
wave (D = 0.50)
80 % Rated V
R
applied
30
see
note (1)
0
0
1
2
3
4
5
0.1
0
0.3
0.6
0.9
1.2
93322_01
V
FM
- Forward Voltage Drop (V)
93322_04
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
4
10
T
J
= 150 °C
I
R
- Reverse Current (mA)
1
0.1
0.01
0.001
0.0001
0
0
Average Power Loss (W)
T
J
= 125 °C
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
2
1
T
J
= 25 °C
0
20
40
60
80
100
93322_05
0
1
2
3
4
5
93322_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
0
93322_03
10
10
100
1000
10 000
40
80
120
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93322_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 19-Sep-11
Document Number: 93322
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
31
2
D
3
Q
4
10
5
G
6
TR
7
-
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
31 = Current Rating, 3.3 A
D = DO-201 (C-16)
Q = Schottky Q.. series
10 = Voltage ratings
G = Schottky generation
None = Bulk package
TR = Tape and reel package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
09 = 90 V
10 = 100 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-31DQ09G
VS-31DQ09GTR
VS-31DQ09G-M3
VS-31DQ09GTR-M3
VS-31DQ10G
VS-31DQ10GTR
VS-31DQ10G-M3
VS-31DQ10GTR-M3
QUANTITY PER T/R
500
1200
500
1200
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
500
1200
500
1200
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
www.vishay.com/doc?95300
Revision: 19-Sep-11
Document Number: 93322
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS
in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
