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40CTQ045PBF_12

Description
20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size164KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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40CTQ045PBF_12 Overview

20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

40CTQ045PBF_12 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationHigh POWER
Phase1
Maximum repetitive peak reverse voltage45 V
Maximum average forward current20 A
Maximum non-repetitive peak forward current1240 A
VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2
common
cathode
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 20 A
45 V
0.48 V
115 mA at 125 °C
150 °C
Common cathode
20 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
45
1240
0.48
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-40CTQ045PbF
45
VS-40CTQ045-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
per leg
Maximum average forward current
See fig. 5
per device
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 116 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
40
1240
350
20
3
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 3 A, L = 4.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 26-Aug-11
Document Number: 94212
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

40CTQ045PBF_12 Related Products

40CTQ045PBF_12 40CTQ045-N3
Description 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Number of terminals 3 3
Number of components 2 2
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Shell connection CATHODE CATHODE
Diode component materials silicon silicon
Diode type rectifier diode rectifier diode
application High POWER High POWER
Phase 1 1
Maximum repetitive peak reverse voltage 45 V 45 V
Maximum average forward current 20 A 20 A
Maximum non-repetitive peak forward current 1240 A 1240 A
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