EEWORLDEEWORLDEEWORLD

Part Number

Search

8TQ080-N3

Description
8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size176KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

8TQ080-N3 Overview

8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC

8TQ080-N3 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationHigh POWER
Phase1
Maximum repetitive peak reverse voltage80 V
Maximum average forward current8 A
Maximum non-repetitive peak forward current850 A
VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AC
8A
60 V, 80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
Single die
7.5 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
8 A
pk
, T
J
= 125 °C
Range
VALUES
8
60 to 100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
60
V
RWM
60
80
80
100
100
V
VS-
8TQ060PbF
VS-
8TQ060-N3
VS-
8TQ080PbF
VS-
8TQ080-N3
VS-
8TQ100PbF
VS-
8TQ100-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
8
850
A
230
7.50
0.50
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 29-Aug-11
Document Number: 94265
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

8TQ080-N3 Related Products

8TQ080-N3 8TQ060-N3 8TQ060PBF_12 8TQ100-N3
Description 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC
Number of terminals 2 2 2 2
Number of components 1 1 1 1
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole
terminal coating MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Terminal location single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure single single single single
Shell connection CATHODE CATHODE CATHODE CATHODE
Diode component materials silicon silicon silicon silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode
application High POWER High POWER High POWER High POWER
Phase 1 1 1 1
Maximum repetitive peak reverse voltage 80 V 80 V 80 V 80 V
Maximum average forward current 8 A 8 A 8 A 8 A
Maximum non-repetitive peak forward current 850 A 850 A 850 A 850 A
Pop Light Program
Please give me some advice, how can I control a series of colored lights to have a "shooting star sweeping" effect! The following program can only control the small lights to fade out as a whole! Plea...
TSB11 MCU
ucos global variable problem
I have an example that defines global variables extern int Steer_err_k, Steer_err_k_1, Steer_err_k_2; they are all initialized to 0Steer_err_k=0; //Steer_internalSteer_err_k_1=0; Steer_err_k_2=0; Then...
micheal986 Real-time operating system RTOS
(Learn C language 51 single chip microcomputer in 1 hour) C language introductory tutorial [transfer]
I believe that many friends who love electronics should be familiar with the term [url=http://www.mcuzx.net/]single chip microcomputer[/url]. However, some friends may only hear that it is called a si...
kooking MCU
Applying intelligent control technology to optimize tire vulcanization control system
The central control PLC, intelligent temperature controller and pressure instrument are used to replace the original three-pin recorder to realize the closed-loop control and recording of the external...
frozenviolet Industrial Control Electronics
【ESP8266】Ported version supporting spiffs format
[i=s]This post was last edited by dcexpert on 2016-8-20 16:46[/i] [font=Tahoma, Helvetica, SimSun, sans-serif]ESP8266's MicroPython (including the pyb version) uses the FAT disk format. As we all know...
dcexpert MicroPython Open Source section
How to use remote tools to track memory leaks in Windows CE applications
[b]How to use remote tools to track memory leaks in Windows CE applications[/b][color=#5d5d5d]0 (out of 6) rated this article helpful - [color=rgb(3, 105, 122)][url=http://msdn.microsoft.com/zh-cn/lib...
Wince.Android Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2333  300  893  2264  2838  47  7  18  46  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号