FT08...I
LOGIC LEVEL TRIAC
On-State Current
8 Amp
Gate Trigger Current
<
10 mA
TO-251AA (IPAK)
Off-State Voltage
400 V ÷ 800 V
FEATURES
Glass/passivated die junctions
Medium current Triac
Ideal for automated placement
Low thermal resistance
High surge current capability
Low forward voltage drop
2
1
2 3
Solder dip 260ºC, 10s
Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
Meets MSL level 3, per J-STD-020, LF maximum
peak of 260º C
MT1 (1)
G (3)
MECHANICAL DATA
Case
:
TO-251AA (IPAK). Epoxy meets UL 94V-0
flammability rating.
Polarity
:
As marked on the body.
Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Logic level versions are designed to interface directly
with low power drivers such as microcontrollers.
MT2 (2)
Maximun Ratings and Electrical Characteristics at 25°C
SYMBOL
PARAMETER
RMS On-state Current (full sine wave)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
PARAMETER
Repetitive Peak Off State Voltage
10s max
VOLTAGE
D
400
Revision: 1
CONDITIONS
All Conduction Angle, T
c
=95 °C
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max.
Tj = 125 °C
I
G
= 2x I
GT
, tr
£100ns
f = 120 Hz, Tj = 125 °C
Tj = 125 °C
Value
8
88
80
32
4
1
50
(-40 +125)
(-40 +150)
260
Unit
A
A
A
A
2
s
A
W
A/µs
°C
°C
°C
Unit
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
G(AV)
dI/dt
T
j
T
stg
T
sld
SYMBOL
V
DRM
/V
RRM
M
600
N
800
V
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Document Name: ft08ill
Version: Oct-13
Page Number: 1/6
FT08...I
LOGIC LEVEL TRIAC
Electrical Characteristics at Tamb = 25 °C
SYMBOL
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
PARAMETER
Gate Trigger Current
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
CONDITIONS
V
D
= 12 V
DC
, R
L
= 33
W,
T
j
= 25 °C
V
D
= 12 V
DC
, R
L
= 33
W
, T
j
= 25 °C
Quadrant
Q1÷Q3 MAX
Q4
MAX
Q1÷Q3 MAX
Q1÷Q4 MAX
V
D
= V
DRM
, R
L
= 3.3 K
W
, T
j
= 125 °C Q1÷Q3 MIN
Q1÷Q4 MIN
I
T
= 100 mA, Gate open, T
j
= 25 °C
I
G
= 1.2
I
GT
, T
j
= 25 °C
MAX
Q1,Q3 MAX
Q1,Q3,Q4
SENSITIVITY
07
5
7
1.3
1.3
0.2
0.2
15
20
30
20
30
40
5.4
2.8
-
1.6
0.85
90
1
5
1.8
15
25
20
20
25
40
08
10
09
10
10
Unit
mA
mA
V
V
V
V
mA
mA
mA
mA
V/µs
MAX
MAX
MIN
Q2
dV/dt
(2)
Critical Rate of Voltage Rise V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 °C
(dl/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c =
0.1 V/µs
(dv/dt)c =
10 V/µs
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
MIN 3.5
MIN 1.5
MIN
MAX
MAX
MAX
MAX
MAX
-
2.5 A/ms
1.5 A/ms
-
V
V
m
W
mA
µA
°C/W
without snubber
V
TM
(2)
V
to
(2)
r
d
(2)
I
DRM
/I
RRM
R
th(j-c)
R
th(j-a)
On-state Voltage
Threshold Voltage
Dynamic resistance
Off-State Leakage Current
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
T
j
= 125 °C
T
j
= 125 °C
V
D
= V
DRM
,
V
R
= V
RRM
,
I
T
= 11 Amp, tp = 380 µs, T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
for AC 360° conduction angle
100
°C/W
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
Part Number Information
F
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
T
08
07
D
I
00 TU
PACKAGING
FORMING
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Document Name: ft08ill
Revision: 1
Version: Oct-13
Page Number: 2/6
FT08...I
LOGIC LEVEL TRIAC
Ordering information
PREFERRED P/N
FT0809DI 00TU
PACKAGE CODE
TU
DELIVERY MODE
TUBE
BASE QUANTITY
4,000
UNIT WEIGHT (g)
0.40
Package Outline Dimensions: (mm)
TO-251AA (IPAK)
REF.
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
Test sort name
MC
XXXI
WWY
Marking code
Format type
Year code
Week code
DIMENSIONS
Milimeters
Min.
Nominal
2.19
2.30
±
0.11
0.89
1.08
±
0.19
0.50
0.70
±
0.20
0.70
0.92
±
0.22
0.51
±
0.08
0.43
0.43
0.62
±
0.19
5.40
5.81
±
0.41
5.70
5.90
±
0.20
6.35
6.54
±
0.19
5.33
±
0.13
5.20
2.30
±
0.05
2.25
7.50
8.58
±
1.08
1.90
2.10
±
0.20
0.89
1.27
±
0.38
Max.
2.41
1.27
0.90
1.14
0.59
0.81
6.22
6.10
6.73
5.46
2.35
9.66
2.28
1.65
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Document Name: ft08ill
Revision: 1
Version: Oct-13
Page Number: 3/6
FT08...I
LOGIC LEVEL TRIAC
Ratings and Characteristics
(Ta 25 ºC unless otherwise noted)
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P (W)
10
8
6
4
2
0
Fig. 2: RMS on-state current versus case
temperature (full cycle)
10
9
8
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
8
IT(RMS)(A)
IT(RMS)(A)
0
0
25
50
75
100
125
Tc (ºC)
Fig. 3: : Relative variation of thermal
impedance versus pulse duration
K=[Zth / Rth]
1E+0
Zth(j-c)
Fig. 4: On-state characteristics (maximum
values)
100
ITM (A)
Tj max
1E-1
10
Zth(j-a)
Tj = 25 ºC
Tj max
Vto = 0.85 V
Rt = 35mW
1E-2
1E-3
1E-2
1E-1 1E+0
1E+1
1E+2 5E+2
tp (s)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VTM (V)
Fig. 5: Surge peak on-state current versus
number of cycles
I TSM
90
80
t=20m
s
One cycle
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
Tj initial = 25 ºC
60
Non repetitive
Tj initial = 25 ºC
1000
ITSM
40
100
20
I
2
t
0
1
10
100
1000
Number of cycles
10
10
tp(ms)
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Document Name: ft08ill
Revision: 1
Version: Oct-13
Page Number: 4/6
FT08...I
LOGIC LEVEL TRIAC
Ratings and Characteristics
(Ta 25 ºC unless otherwise noted)
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
2.5
2.0
1.5
1.0
0.5
Tj(ºC)
0
-40 -20 0 20 40 60 80 100120140
I
H
&I
L
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
6
5
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25°C]
IGT
4
3
2
1
0
Tj(°C)
0
25
50
75
100
125
Fig. 9: Relative variation of critical rate
of decrease of main current versus
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µS)
(dV/dt)c (typical values).
1.0
10.0
100.0
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Version: Oct-13
Page Number: 5/6
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