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FR106

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size28KB,2 Pages
ManufacturerTiger Electronic Co.,Ltd.
Websitehttp://www.tgselec.com/
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FR106 Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

TIGER ELECTRONIC CO.,LTD
1.0AMP FAST RECOVERY RECTIFIERS
DO-41
φ
0.107( 2.7 )
φ0.080
( 2.0 )
FR101 THRU FR107
VOLTAGE RANGE: 50 to 1000 VOLTS
FEATURES
. Low cost
. Diffused junction
. Low Leakage
. Low forward voltage drop
. High current capability
. Easily cleaned with Freon. Alcohol. Lsopropanol and similar
solvents
. The plastic material carries U/L recognition 94V-O
0.034(0.86)
0.028(0.7)
0.205(5.2)
0.160(4.1)
1.0 ( 25.4 )
1.0 ( 25.4 )
MECHANICAL DATA
. Case: JEDEC DO - 41. molded plastic
. Terminals: Axial leads. Solderable per MIL - STD - 202.
Method 208
inch ( mm )
. Polarity: Color band denotes cathode
. Weight: 0.012 ounce. 0.33 grams
. Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase half wave 60HZ. resistive or inductive load. For capacitive load current derate by 20%
SYMBOL FR101
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
9.5mm Lead Length. T
A
= 55℃
Peak Forward Surge Current
8.3ms Single half-sine-wave superimposed
on rated load
Maximum Forward Voltage at 1.0A DC
Maximum Reverse Current
T
A
= 25℃
at Rated DC Blocking Voltage T
A
= 100℃
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Junction Temperature Range
Storage Temperature Range
V
F
I
R
trr
C
j
R
QJA
T
j
T
STG
150
15
55
55 to 125
55 to 150
1.2
5.0
100
250
500
V
μA
ns
pF
℃/W
I
FSM
30
A
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
FR102
100
70
100
FR103
200
140
200
FR104
400
280
400
1.0
FR105
600
420
600
FR106
800
560
800
FR107
1000
700
1000
UNITS
V
V
V
A
NOTE: 1.Measured with IF=0.5A,IR=1A,Irr=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Ambient.
GIANTION ELECTRONICS

FR106 Related Products

FR106 FR101 FR102 FR103 FR104 FR105 FR107
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE,1KV V(RRM),DO-41
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