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3DD13005

Description
4A , 700V NPN Plastic-Encapsulated Transistor
File Size109KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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3DD13005 Overview

4A , 700V NPN Plastic-Encapsulated Transistor

3DD13005
Elektronische Bauelemente
4A , 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
TO-220J
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
700
400
9
4
2
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
t
F
t
S
Min.
700
400
9
-
-
-
20
5
-
-
-
5
-
1.8
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
0.1
0.05
30
-
0.3
0.8
1.6
-
0.6
6.6
Unit
V
V
V
mA
mA
Test Condition
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=10mA
I
C
=1A, I
B
=0.2A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A
V
CE
=10V, I
C
=500mA, f =1MHz
I
B1
= -I
B2
=0.4A, I
C
=2A, V
CC
=120V
I
C
=0.25A
V
V
V
MHz
µs
µs
Any changes of specification will not be informed individually.
2-Nov-2011 Rev. A
Page 1 of 1

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