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DTC143ZE_11

Description
SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size348KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

DTC143ZE_11 Overview

SMALL SIGNAL TRANSISTOR

DTC143ZE_11 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeUniversal small signal
DTC143ZE / DTC143ZUA
DTC143ZCA / DTC143ZSA / DTC143ZM
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTC143ZE (SOT-523)
DTC143ZUA (SOT-323)
Addreviated symbol:E23
DTC143ZM (SOT-723)
Addreviated symbol:E23
DTC143ZCA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol:E23
DTA143ZSA (TO-92S)
Addreviated symbol:E23
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Limits (DTC143Z□)
Parameter
Collector-Base Voltage
Input voltage
Output current
Power dissipation
Junction & Storage temperature
Symbol
M
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
, T
STG
100
150
Unit
E
UA
50
-5~30
100
mA
100
200
150, -55~150
300
mW
°
C
CA
SA
V
V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Nov-2011 Rev.C
Page 1 of 2

DTC143ZE_11 Related Products

DTC143ZE_11 DTC143ZM DTC143ZSA
Description SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Maker - SECOS SECOS
package instruction - SMALL OUTLINE, R-PDSO-F3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code - compli compli
Is Samacsys - N N
Other features - BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 80 80
JESD-30 code - R-PDSO-F3 O-PBCY-T3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR ROUND
Package form - SMALL OUTLINE CYLINDRICAL
Polarity/channel type - NPN NPN
surface mount - YES NO
Terminal form - FLAT THROUGH-HOLE
Terminal location - DUAL BOTTOM
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 250 MHz 250 MHz
Base Number Matches - 1 1
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